Some basic considerations concerning the sensitivity of sputter ion mass spectrometers

Ruedenauer, F.

doi:10.1016/0020-7381(71)85011-8

Cited by 27 publications

(3 citation statements)

References 15 publications

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“…where n A is the atom density (atoms cm 3 ) of element A and 0 is the sensitivity factor related to the absolute concentration n A (atoms cm 3 ). Note that (instead of related to the fractional concentration c A of Eqns 1 and 2).…”

Section: Standards For Quantification: the Implantation Standard Methodmentioning

confidence: 99%

“…My calculations showed that there should be enough secondary ion current. Later Ruedenauer 3 and Slodzian, 4 on the basis of ion optical and phase space considerations, respectively, showed that the ultimate detection limit of SIMS can be in the parts per billion range. Around that time, when I visited a theoretician to learn of his ideas about SIMS he told me that 'this could not work at all'.…”

Section: The Concept Of Simsmentioning

confidence: 99%

“…(2) Thin-film resistors consisting of NiCr and NiFe films, which had appeared on the horizon. (3) Individual/discrete transistors with typical dimensions of 10 ð 10 ð 1 mm 3 . These had to be analysed for surface composition and diffusion profiles (In Ge at that time because silicon was not yet in vogue).…”

Section: Analytical Problemsmentioning

confidence: 99%

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SIMS: from research to production control

Werner

2003

Surface & Interface Analysis

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In 1958, when I joined the Philips Research Laboratories, there were a number of technological problems related to the analysis of solids within Philips that needed analytical support. Because the available (bulk) techniques did not give sufficient results, a new technique, later called secondary ion mass spectrometry (SIMS), was launched that involved the bombardment of a solid target with (primary) energetic ions, followed by mass analysis and ion detection of the sputtered (secondary) target ions.The restrictions of the available infrastructure for such an analytical technique were many: there was no PC for data handling, no internet or database for literature search, the photocopying machine was not yet invented, communication with other scientists had to be done by mail (there was no fax, no E-mail, no mobile phones) and, what was worse, SIMS was not considered to be a useful analytical technique compared with established techniques! In the years that followed there were many advances:(1) The SIMS instrumentation was improved by better ion optics, advanced electronic equipment and was extended from sector type to quadrupole and finally to time-of-flight (TOF) mass spectrometers. (2) The methodology of SIMS was developed step by step (parameters such as lateral and depth resolution, detection limit and quantitative analysis were all optimized in turn). (3) The SIMS technique then made its entrance to solve problems in technology development.In the last two decades SIMS has become an indispensable, reliable, quantitative analytical technique for production control in integrated circuit technology and the after-sales care of integrated circuits. The philosophy of the provision of an analytical service at the Philips Research Laboratory (hereinafter referred to as 'our laboratory') is discussed. After the initial period, where every method (SIMS, AES, ESCA, RBS, etc.) was claimed to be 'the only one' (the panacea), we learned how to organize analytical service cost efficiently and for the optimum benefit of the 'customer'. The core analytical techniques were concentrated in one department and the customer would profit from synergy by using several appropriate analytical techniques for the same problem.Today, the latest developments in SIMS instrumentation keep pace with the latest challenges of the ultra-large-scale integration (ULSI) roadmap for integrated circuits, which indicates the dimensions of the circuits that are predicted for the years to come.

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Section: Standards For Quantification: the Implantation Standard Methodmentioning

confidence: 99%

Section: The Concept Of Simsmentioning

confidence: 99%

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SIMS: from research to production control

Werner

2003

Surface & Interface Analysis

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SIMS instrumentation and imaging techniques

Liebl

1980

Scanning

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Secondary ion mass spectrometry (SIMS) has evolved as a technique for characterizing solids and surfaces which is distinguished by high sensitivity and its applicability to all elements. It can be used for surface research, in‐depth concentration profiling, isotopic work, and the identification of compounds. Combined with imaging techniques, these applications can be made with high spatial resolution. In this respect, ion probe microanalysis complements electron probe microanalysis (XRMA and scanning AES).

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Introduction to Secondary Ion Mass Spectrometry (SIMS)

Werner

1978

Electron and Ion Spectroscopy of Solids

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Some basic considerations concerning the sensitivity of sputter ion mass spectrometers

Cited by 27 publications

References 15 publications

SIMS: from research to production control

SIMS: from research to production control

SIMS instrumentation and imaging techniques

Introduction to Secondary Ion Mass Spectrometry (SIMS)

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