Some Considerations on TunnelingLosses in Field‐Effect Devices for Low‐Voltage Microcontrollers

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Some Considerations on TunnelingLosses in Field‐Effect Devices for Low‐Voltage Microcontrollers

Abstract: The loss power density associated with the tunneling current in a typical MOS cell with a floating gate is evaluated for high electric-field strengths in the oxide layer. Furthermore, problems related to oxide thickness are discussed.

Cited by 2 publications

References 1 publication

Effect of the oxide thickness on the operation speed of a field-effect transistor in terms of the carrier tunneling rate

Effect of the oxide thickness on the operation speed of a field-effect transistor in terms of the carrier tunneling rate

A Quantitative Study on Tunneling Conductivity of a Floating-Gate Mosfet in Terms of the Oxide-Layer Width

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