Some effects of (NH4)2Sx treatment of n-GaAs surface on electrical characteristics of metal-SiO2–GaAs structures

Kochowski, S.; Paszkiewicz, B.; Paszkiewicz, R.

doi:10.1016/s0042-207x(00)00125-1

Cited by 21 publications

(4 citation statements)

References 19 publications

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“…In general, the C-f plots in the idealized case are frequency independent [12][13][14][15]. However, this idealized case is often disturbed due to the presence of the interface states at the interfacial layer and with the semiconductor interface [16][17][18][19]. At low ac signal, the charge is exchanged between the interface states and the semiconductor and so, the measured junction capacitance is the sum of the space charge and interface states capacitance [20].…”

Section: Resultsmentioning

confidence: 99%

Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

Sakr

Yahia

2010

Journal of Alloys and Compounds

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Section: Resultsmentioning

confidence: 99%

Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

Sakr

Yahia

2010

Journal of Alloys and Compounds

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“…[61][62][63][64][65] The parameters such as series resistance and bulk states can generally affect the conductance at high frequency. 18, 58, and 60, the conductance method yields more accurate and reliable results about interface states.…”

Section: B Dynamic Measurementsmentioning

confidence: 99%

n -type InP Schottky diodes with organic thin layer: Electrical and interfacial properties

Güllü

Türüt

2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Depth distribution of traps in Au ∕ n -GaAs Schottky diodes with embedded InAs quantum dots J. Appl. Phys. 97, 064506 (2005); 10.1063/1.1863456Thermal stability of epitaxial aluminum on In 0.53 Al 0.47 As Schottky diodes grown by molecular beam epitaxyThe rectifying junction characteristics of methyl red ͑MR͒ organic film on n-type InP substrate have been studied. It has been observed that MR-based structure shows an excellent rectifying behavior and that the MR film increases the effective barrier height by influencing the space charge region of the n-type InP. The barrier height and ideality factor values for this structure have been obtained as 0.75 eV and 1.93 from the forward bias current-voltage characteristics, respectively. By using capacitance-voltage characteristics at 1 MHz, the barrier height and the carrier concentration values have been calculated as 0.93 eV and 5.13ϫ 10 15 cm −3 , respectively. The energy distributions of the interface states and their relaxation times have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics. Moreover, it was seen that both the interface-state density and the relaxation time of the interface states decreased with bias voltage from experimental results.

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“…The conductance technique involves point by point determination of the density of interface states throughout the depletion region. The only contribution to conductance comes from the interface states [39][40][41][42][43]. The parameters such as series resistance and bulk states can generally affect the conductance at high frequency.…”

Section: The Capacitance and Interfacementioning

confidence: 99%

Impedance and Interface Properties of Al/Methyl‐Red/p‐InP Solar Cell

Güllü

2009

International Journal of Photoenergy

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An Al/methyl-red/p-InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage (I-V) and capacitance-voltage-frequency (C-V-f) measurements at room temperature. From darkI-Vcharacteristics, the values of ideality factor and barrier height of the device were calculated as 1.11 eV and 2.02, respectively. It has been seen that the device exhibited a good photovoltaic behavior with a maximum open circuit voltageVocof 0.38 V and short-circuit currentIscof 2.8 nA under only 200 lx light intensity. The barrier height and acceptor carrier concentration values for the Al/methyl-red/p-InP devices were extracted as 1.27 eV and3.46×1017 cm-3from linear region of itsC-2-Vcharacteristics, respectively. The difference betweenΦb(I-V) andΦb(C-V) for Al/methyl-red/p-InP device was attributed the different nature of theI-VandC-Vmeasurements. Also, the energy distribution curves of the interface states and their time constants were obtained from the experimental conductance properties of the Al/methyl-red/p-InP structure at room temperature. The interface state densities and their relaxation times of the device have ranged from2.96×1012 cm-2eV-1and4.96×10-6s at (1.11-Ev) eV to5.19×1012 cm-2 eV-1and9.39×10-6s at (0.79-Ev) eV, respectively. It was seen that both the interface state density and the relaxation time of the interface states have decreased with bias voltage from experimental results.

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Some effects of (NH4)2Sx treatment of n-GaAs surface on electrical characteristics of metal-SiO2–GaAs structures

Cited by 21 publications

References 19 publications

Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

Effect of illumination and frequency on the capacitance spectroscopy and the relaxation process of p-ZnTe/n-CdMnTe/GaAs magnetic diode for photocapacitance applications

n -type InP Schottky diodes with organic thin layer: Electrical and interfacial properties

Impedance and Interface Properties of Al/Methyl‐Red/p‐InP Solar Cell

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