Some electrical transport studies on compounds of the Tl-Te system

Cruceanu, E.; Slădaru, St.

doi:10.1007/bf00549706

Cited by 33 publications

(18 citation statements)

References 10 publications

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“…the high density of trapping levels which must occur at the cluster-cluster interfaces. There seems to be some controversy concerning the properties of solid material in the composition range near to Tl,Te, (Lips and Nahlik 1968, Cruceanu, 1969), so no extrapolation to the liquid phase is possible. It might also be thought to be coincidental that the clusters change the sign of the thernioelectric power, and reach maximum resistivity just at the point where the miscibility gap begins (and which is approximately the composition T1,Te).…”

Section: Doping Of the Clusters And Effects Of Impuritiesmentioning

confidence: 97%

“…The two systems to be considered in greatest detail are the I n 4 system (Morris 1971) and the T1-Te system (Cutler and Mallon 1966, Cutler and Field 1968, Enderby and Simmons 1969, Nakamura and Shimoji 1969. The Ag-S and T1-Se systems will also be considered.…”

Section: Experimental Evidencementioning

confidence: 99%

“…2. A further paper by Cutler and Field (1968) is devoted to n-type alloys of thallium and tellurium. I n these the thallium content is in excess of the composition T1,Te.…”

Section: Experimental Evidencementioning

confidence: 99%

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Structure and conductivity mechanisms in some liquid semiconductors

Hodgkinson¹

1971

Philosophical Magazine

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The electrical properties of liquid In-S and Tl-Te mixtures are examined in the light of a cluster model, consisting of small ' semiconducting ' clusters mixed up with highly conducting random liquid. It is found that this model can account for all the electrical properties, and is elso applicable to other systems including semiconducting glseees. Evidenoe on conhotless eleotrioal conductivity measurements on glasses tends to support the model. $ 1 . INTRODUCTION IN a previous paper (Hodgkinson 1970, afterwards called I), models of associated liquids were discussed. Although the paper was primarily aimed at discussing the formation of miscibility gaps by associated liquids, it was also relevant to the subject of liquid semiconductors. In the first place, it has been usual to suppose that liquid semiconductors are to some extent ordered. Secondly, many binary systems in which the liquid is semiconducting do in fact have the type of phase diagranis discussed in I. The general theory would be applicable even in cases where no miscibility gap appears. In fact, the models discussed in I can also account for the existence of a fairly large degree of order over a limited (but reasonably large) composition range, but without the appearance of a miscibility gap. This is particularly important in discussing, for example, the silversulphur system (Dancy and Derge 1963). In this system the liquid is semiconducting over only part of the composition range, even at temperatures above that at which the miscibility gap disappears. Other systems (e.g. Mg-Bi) have similar properties. Two basic models for the associated liquid were discussed in I : an overall order model and a model in which small clusters of highly ordered material were formed. The clusters were of two types-dongated or nearly spherical.Previous discussions (Cutler and Mallon 1966, Enderby and Simmons 1969) of liquid semiconductors have not considered the structure in detail. It has been assumed that there is some overall energy-level structure, similar to that in a crystalline semiconductor, although certain modifications are expected (Mott 1969). In the treatments of Cutler and Mallon it has been assumed implicitly that the energy-level structure of Tl-Te melts varies little with composition. Other treatments (Nakamura and Shimoji 1969) have included similar assumptions.

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Section: Doping Of the Clusters And Effects Of Impuritiesmentioning

confidence: 97%

Section: Experimental Evidencementioning

confidence: 99%

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Structure and conductivity mechanisms in some liquid semiconductors

Hodgkinson¹

1971

Philosophical Magazine

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“…They also suggested this exchange mentioned above to reconcile their results with the known semiconducting properties of Tl 2 Te 3 (p-type semiconductor, E g = 0.68 eV [8]). …”

Section: Introductionmentioning

confidence: 68%

The Crystal Structure of Tl2Te3 - a Reinvestigation

Doert

Böttcher

Cardoso‐Gil

1999

Z. anorg. allg. Chem.

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Crystals of the title compound were obtained by annealing a powder of Tl2Te3 in a vertical temperature gradient (230 °C–240 °C, 4 weeks). Tl2Te3 crystallizes in space group C2/c with lattice parameters of a = 13.275(1) Å, b = 6.562(1) Å, c = 7.918(1) Å, and β = 107.14°(2). The tellurium atoms form chains ∞1[Te32–], consisting of interconnected linear triatomic · Te–^Te–Te · groups which are isosteric with XeF2. The Te–Te distances of the XeF2‐like units are 3.02 Å, the connecting ones 2.83 Å.

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“…For the corresponding reactions with Bi, we applied phases that were generated by simply fusing Bi and Ch in a 1:2 ratio. For Tl, we aimed at the use of a Tl I species, different from the known, mixed‐valence phase TlTe 23. For this, we started from Tl 2 Te,24 and carefully pulverized it along with 1 equiv.…”

Section: Resultsmentioning

confidence: 99%

Bautechnik aktuell 3/2015

2015

Bautechnik

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Some electrical transport studies on compounds of the Tl-Te system

Cited by 33 publications

References 10 publications

Structure and conductivity mechanisms in some liquid semiconductors

Structure and conductivity mechanisms in some liquid semiconductors

The Crystal Structure of Tl2Te3 - a Reinvestigation

Bautechnik aktuell 3/2015

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