Some Electrophysical Properties of Polycrystalline Silicon Obtained in a Solar Oven

Abstract

The article describes the results of the study of the microstructure and some electrophysical properties of silicon obtained by re-melting in a solar oven. It was found that the granularity of polycrystalline silicon consists of Si atoms with a size of 10-15 µm, the roughness of its surface. Decrease in speci c resistance at T≤600 K, increase in concentration of ionized input atoms and concentration of charge carriers, the position at Т∼600 ÷ 700 K is based on the decrease in the free path of the charge carriers as a result of thermal vibrations of the crystal lattice, the situation at T ≥ 700 K K was explained by the emergence of new recombination centers speci c to localized traps. Polycrystalline silicon heated by sunlight does not create a barrier effect of traps localized in the grain boundary regions from polycrystalline silicon obtained by other methods. This can expand the possibilities of creating highly e cient semiconductor devices, solar cells, thermoelectric materials for micro-and nanoelectronics, photovoltaics.

Charge Transfer Processes In Granulated Mg3Sb2 Particles

“…It should be noted that the temperature dependence of ρ, µ and n in granular semiconductor particles depends on the charge transfer processes in the particles [13][14][15]. Charge transfer processes in granular particles can be explained as follows depending on the structure of the particles and their charge transfer mechanisms.…”

“…It should be noted that in recent years, much attention has been paid to the preparation of thermoelectric materials based on micro-and nano-sized granular semiconductor particles and to the study of their properties [8][9][10][11][12]. Thermoelectric materials made on the basis of granulated semiconductor particles consist of a heterogeneous medium [11,12], parameters σ, α, λ have been observed to depend on the charge transfer process in granulated particles [13][14][15]. In connection with these, it is interesting to study the formation of heterogeneous environment in granulated particles of Mg 3 Sb 2 type and charge transfer processes in them.…”

Obtaining granular semiconductor intermetallic compound Zn-Sb and some of its electrical properties

“…1. It is known that the structure and morphology of granulated semiconductor particles depends on the technology of their production [13][14][15][16][17][18][19][20]. For example, the structure of particles obtained on the basis of powder technology can be conditionally divided into 3 parts (Fig.…”

“…Researches were carried out on the basis of Egor and Disselkhorsta method in the process of temperature change T=300-700 K [20]. This method makes it possible to study charge transfer processes and thermoelectric phenomena during the formation stages of granulated Zn-Sb semiconductor intermetallic compound (see, for example, [13][14][15][16][17][18][19][20] and references therein).…”

“…It should also, be noted that in recent years, the interest in preparing granulated semiconductors and obtaining thermoelectric materials based on them, studying their electro physical properties is increasing [13][14][15][16][17][18][19][20]. Production of thermoelectric material based on granulated semiconductors is based on powder technology, which is characterized by its relative simplicity and cost-effectiveness.…”