Some physical properties of Co2Si and Ni2Si in the 10?350 �k temperature range

Frolov, A. A.; Krentsis, R. P.; Sidorenko, F. A.; Gel’d, P. V.

doi:10.1007/bf00834614

Cited by 5 publications

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“…The linear current versus voltage behavior at room temperature indicates an ohmic contact between the NW and electrodes. The resistivities of the two- and four-probe configurations are 546 and 200 μΩ·cm, respectively, which match well with that reported for bulk single-crystalline Co 2 Si (190 μΩ·cm) . The higher value of two-probe resistivity is due to the contact resistance between the NW and electrodes.…”

Section: Resultssupporting

confidence: 86%

“…It has been very difficult to synthesize Co 2 Si even in bulk due to its thermodynamic instability. While few reports are available referring to the physical properties of Co 2 Si, conclusions are rather vague. − It is conjectured that the low T c and weak ferromagnetic properties of Co 2 Si measured in this work are attributable to the orthorhombic crystal structure. , Simple cubic CoSi is normally diamagnetic. For CoSi NWs with diameters less than 30 nm, the high percentage of surface Co atoms induces strong ferromagnetic properties of CoSi NWs, which could not be confirmed in the case of Co 2 Si NWs that are about 80 nm thick.…”

Section: Resultsmentioning

confidence: 76%

“…The resistivities of the two-and four-probe configurations are 546 and 200 ⍀ • cm, respectively, which match well with that reported for bulk single-crystal- line Co 2 Si (190 ⍀ • cm). 33 The higher value of twoprobe resistivity is due to the contact resistance between the NW and electrodes. The resistance decreases monotonically with decreasing temperature from room temperature to 2 K. This is a typical metallic behavior.…”

Section: Resultsmentioning

confidence: 99%

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Composition-Tuned Co_nSi Nanowires: Location-Selective Simultaneous Growth along Temperature Gradient

et al. 2009

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We report the simultaneous and selective synthesis of single-crystalline Co(n)Si NWs (n = 1-3) and their corresponding crystal structures--simple cubic (CoSi), orthorhombic (Co(2)Si), and face-centered cubic (Co(3)Si)--following a composition change. Co(n)Si NWs were synthesized by placing the sapphire substrates along a temperature gradient. The synthetic process is a successful demonstration of tuning the chemical composition in Co(n)Si NWs. The synthesis and detailed crystal structure of single-crystalline Co(2)Si and Co(3)Si are reported for the first time including the bulk and the nanostructure phases. The electrical and magnetic properties of Co(2)Si NWs are investigated and compared with those of CoSi NWs.

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Section: Resultssupporting

confidence: 86%

Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 99%

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Composition-Tuned Co_nSi Nanowires: Location-Selective Simultaneous Growth along Temperature Gradient

et al. 2009

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“…The four-terminal measurement gives a room temperature resistivity of 213 mO cm matching well with those of Co 2 Si nanowires (as low as 200 mO cm) 27,44 and bulk Co 2 Si (190 mO cm). 45 The resistivity-temperature (r-T) plot shows the resistivity of the nanobelt decreases from 208 mO cm at 275 K to 98.6 mO cm at 1.5 K (Fig. 2C), indicating the metallic characteristics.…”

mentioning

confidence: 99%

“…An inflection point is observed in the r-T plot at around 160 K, similar to that of bulk Co 2 Si. 45 The magnetic properties of Co 2 Si material are rather elusive to date since bulk Co 2 Si is a thermodynamically unstable phase and difficult to obtain. In an early literature, bulk Co 2 Si was predicted as a diamagnetic material.…”

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confidence: 99%