Some physical properties of Ga2Te5 single crystals

Nassary, M. M.; Gerges, M. K.; Shaban, H.; Salwa, A.S.

doi:10.1016/s0921-4526(03)00388-0

Cited by 10 publications

(10 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The measured electrical conductivity of bulk crystalline Ga 2 Te 5 is shown in Figure 2a. In contrast to previously reported results [58], the electrical conductivity follows the Arrhenius relationship over the entire temperature range…”

Section: Electric and Optical Propertiescontrasting

confidence: 99%

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

et al. 2023

View full text Add to dashboard Cite

Neuromorphic computing, reconfigurable optical metamaterials that are operational over a wide spectral range, holographic and nonvolatile displays of extremely high resolution, integrated smart photonics, and many other applications need next-generation phase-change materials (PCMs) with better energy efficiency and wider temperature and spectral ranges to increase reliability compared to current flagship PCMs, such as Ge2Sb2Te5 or doped Sb2Te. Gallium tellurides are favorable compounds to achieve the necessary requirements because of their higher melting and crystallization temperatures, combined with low switching power and fast switching rate. Ga2Te3 and non-stoichiometric alloys appear to be atypical PCMs; they are characterized by regular tetrahedral structures and the absence of metavalent bonding. The sp3 gallium hybridization in cubic and amorphous Ga2Te3 is also different from conventional p-bonding in flagship PCMs, raising questions about its phase-change mechanism. Furthermore, gallium tellurides exhibit a number of unexpected and highly unusual phenomena, such as nanotectonic compression and viscosity anomalies just above their melting points. Using high-energy X-ray diffraction, supported by first-principles simulations, we will elucidate the atomic structure of amorphous Ga2Te5 PLD films, compare it with the crystal structure of tetragonal gallium pentatelluride, and investigate the electrical, optical, and thermal properties of these two materials to assess their potential for memory applications, among others.

show abstract

Section: Electric and Optical Propertiescontrasting

confidence: 99%

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

et al. 2023

View full text Add to dashboard Cite

show abstract

“…This figure clearly indicates the absence of any imaginary frequency in the entire BZ, which verifies the dynamic stability of the two phases. Nassary et al [43] researched I4/m Ga 2 Te 5 based on experiment. However, a detailed description of theoretical studies remains lacking.…”

Section: Crystal Structures and Stability Of Ga-te Systemsmentioning

confidence: 99%

“…This indicates that Te accounts for the main contribution near the Fermi surface. Nassary et al [43] had synthesized Ga 2 Te 5 single crystal by a special modified Bridgman technique and measured the Hall coefficient, they concluded that Ga 2 Te 5 is a layered semiconductor. In this study, we also calculated the electronic band structure (Fig.…”

Section: Electronic Properties Of Ga-te Systemsmentioning

confidence: 99%

Structural and electrical properties of Ga–Te systems under high pressure*

Wang¹,

Tian²,

Li³

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

First-principles evolutionary calculation was performed to search for all probable stable Ga–Te compounds at extreme pressure. In addition to the well-known structures of P63/mmc and Fm-3m GaTe and I4/m Ga2Te5, several new structures were uncovered at high pressure, namely, orthorhombic I4/mmm GaTe2 and monoclinic C2/m GaTe3, and all the Ga–Te structures stabilize up to a maximum pressure of 80 GPa. The calculation of the electronic energy band indicated that the high-pressure phases of the Ga–Te system are metallic, whereas the low-pressure phases are semiconductors. The electronic localization functions (ELFs) of the Ga–Te system were also calculated to explore the bond characteristics. The results showed that a covalent bond is formed at low pressure, however, this bond disappears at high pressure, and an ionic bond is formed at extreme pressure.

show abstract

“…Among the reported synthesized 2D materials, layered hybrid group III A and group VI A materials have seldom been reported, except for In 2 Se 3 . 16 Recently, the Ga 2 Te 5 crystal has been reported to exhibit excellent thermoelectric properties, [17][18][19] which greatly correspond to the electrical conductivity, which in turn affects the crystal's dielectric function and optical response. Yet, no layered bulk phase of Ga 2 Te 5 has been discovered in nature, as far as we know; therefore the experimental production of a Ga 2 Te 5 monolayer will most likely be challenging.…”

Section: Introductionmentioning

confidence: 99%

First-principles calculations of monolayered Al₂Te₅: a promising 2D donor semiconductor with ultrahigh visible light harvesting

et al. 2023

View full text Add to dashboard Cite

show abstract

Some physical properties of Ga2Te5 single crystals

Cited by 10 publications

References 11 publications

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

Structural and electrical properties of Ga–Te systems under high pressure*

First-principles calculations of monolayered Al₂Te₅: a promising 2D donor semiconductor with ultrahigh visible light harvesting

Contact Info

Product

Resources

About

Some physical properties of Ga2Te5 single crystals

Cited by 10 publications

References 11 publications

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

Decoding the Atomic Structure of Ga2Te5 Pulsed Laser Deposition Films for Memory Applications Using Diffraction and First-Principles Simulations

Structural and electrical properties of Ga–Te systems under high pressure*

First-principles calculations of monolayered Al2Te5: a promising 2D donor semiconductor with ultrahigh visible light harvesting

Contact Info

Product

Resources

About

First-principles calculations of monolayered Al₂Te₅: a promising 2D donor semiconductor with ultrahigh visible light harvesting