Some Properties of Atomic Beams from Laser Irradiated Zirconium

Leismann, P.; Henč-Bartolić, Višnja; Rebhan, Ulrich; Kunze, H.‐J.

doi:10.1088/0031-8949/30/3/004

Cited by 10 publications

(3 citation statements)

References 9 publications

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“…A parallel is drawn between the present results for sapphire and those of other authors for metals, oxides, halides, and large organic molecules bombarded under conditions of rapid energy deposition, i.e. using photon pulses, fission fragments, electron pulses, or even small accelerated dust particles.6-9 A particularly close precedent for the observation of high kinetic energies yet low internal energies is the work of Leismann et al 8 on laser-bombarded oxidized Zr, effectively ZrOa.…”

Section: Introductionsupporting

confidence: 68%

Laser sputtering–part IV: Laser interferometry and laser-induced fluorescence studies of insulators

1986

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Ultra-violet laser etching (sputtering) of solids has been explained in various terms, including thermal, electronic, hydrodynamic, exfoliational, and even collisional processes. To distinguish between these possibilities, two laser techniques are used here to probe the plume of material expanding away from the etched surface of certain insulators due to 248 nm pulses. The first set of experiments measures the free-electron density in the plume using a Michelson interferometer.The results indicate that a plasma is formed for laser fluences greater than some threshold value (which depends on the material). With ,41203, the plasma threshold is, moreover, similar to but slightly higher than the etching threshold, suggesting that collisional sputtering due to fast ions from this plasma does not contribute substantially to the etching. The second set of experiments, using laser-induced fluorescence, measures the number densities and energy distributions of A1 and A10 in the plume when etching Ah03. Time-of-flight distributions indicate Boltzmann-like behavior with kTequal to -3.5-17eV for A1 and -1.1-0.3 eV for AIO. In contrast, the rotational and vibrational energies of A10 correspond to only 0.04-0.16 eV, suggestive of a low surface temperature during etching. These observations are consistent with an electronic desorption mechanism similar to that found with incident fission fragments, electron pulses, or small accelerated dust particles.

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Section: Introductionsupporting

confidence: 68%

Laser sputtering–part IV: Laser interferometry and laser-induced fluorescence studies of insulators

1986

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“…Phpsica Scripta 42 Table V shows the data of T, , measured for Zr I and AI I atomic beams in the present as well as other work [5,11,331 under different experimental conditions, where kT,, is in each case much lower than the mean kinetic energy of the corresponding atomic beam. Although T,, of the Zr beam was much higher than that of the A1 beam, it was still lower than the corresponding boiling temperature Tb(Zr : Tb z 4732 ?…”

Section: Efsective Excitation Temperature Of the Ai And Zr Atomic Bea...mentioning

confidence: 56%

“…The space-time dependence of the fluid density n(z, t ) is described in eqs. (8)(9)(10)(11)(12) by five free parameters C, D, to, z and N associated with the boundary conditions v(0, t ) and n(0, t). Except for N and o, all the other parameters could be fixed uniquely by the curve fitting process.…”

Section: Resultsmentioning

confidence: 99%

Investigation of effective ionization rate coefficients of Al I and Zr I in a plasma using laser produced atomic beams

Chu

Kunze²

1990

Phys. Scr.

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Al I and Zr I atomic as well as Zr II ionic beams were produced by laser irradiation of Al and Zr targets. The beams were injected into a plasma, and effective ionization rate coefficients were derived by analyzing the beam densities both with and without the plasma present. Because of the large number of intermediate levels, the Zr I atoms are ionized much faster than the Al I atoms under the same plasma conditions, in spite of the fact that the ionization energy from the ground state for Zr I is higher than that for Al I. The results are compared with theoretical effective ionization rate coefficients assuming a simplified two-step ionization process. For Zr I, the measured effective ionization rate coefficients were found to be two to five times the sum of the excitation rate coefficients for electric dipole-allowed transitions and for Al I one to three times. These results may represent a limiting case, in which the effective ionization rate coefficient is nearly equal to the sum of all excitation rate coefficients including electric dipole-allowed as well as multipole and forbidden transitions.

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Structural phototransformations in thin selenium films

Hansen

Robitaille

1987

Thin Solid Films

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Some Properties of Atomic Beams from Laser Irradiated Zirconium

Cited by 10 publications

References 9 publications

Laser sputtering–part IV: Laser interferometry and laser-induced fluorescence studies of insulators

Laser sputtering–part IV: Laser interferometry and laser-induced fluorescence studies of insulators

Investigation of effective ionization rate coefficients of Al I and Zr I in a plasma using laser produced atomic beams

Structural phototransformations in thin selenium films

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