Some properties of the visible luminescence excited in diamond by irradiation in the fundamental absorption edge

ESR and optical evidence for a Ni vacancy center in CVD diamond

“…6, which represents a PLE spectrum from the broad blue band in natural diamond in the range of intrinsic absorption ͑note the different x-axis scale͒ taken from the data of Dean and Male. 29 Such oscillations were observed for band-to-band and band-to-defect-level excitation transitions in natural and CVD diamond, and were discussed in detail in our previous work. 16 They are explained 30 by phonon-assisted modulation of the carrier lifetime when a carrier is excited to the valence or conduction band ͑VB or CB͒: if the excited state of a defect in the forbidden gap lies close to the edge of the VB or CB, there is enhanced probability of transitions of photoexcited carriers from the band to this state by cascade emission of phonons, without thermalization of the carrier to the bottom of the band.…”

“…A FZZ , A FY Y , and A FXX are diagonal values of the A matrix for the F lines ( 13 C). topes with nuclear spin Iϭ1/2, like 4ϫ 13 C ͑the natural abundance is 1.1%͒, 1ϫ29 Si ͑natural abundance 4.7%͒, 2 ϫ 57 Fe ͑natural abundance 2.19%͒, etc., could in principle account for the F lines, none matches the intensity of the lines E and EЈ. Coincidentally, the splitting between the latter lines is close to three times that of the doublet F and FЈ.…”

The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

“…These observations have led to suggestions [43,48] that a blue LED can be fabricated using semiconducting diamond, and, indeed, blue emission has recently been observed from forward and reversed biased Schottky diodes on boron-doped CVD layers [49]. [45] and [46]). …”

“…It is well-known that, following electron-hole pair generation in natural diamond by electron-beam excitation, or absorption of above-band-gap radiation, blue luminescence is often produced [45,46]. Blue electroluminescence was first observed in semiconducting diamond more than 30 years ago [10], and Prior and Champion [47] showed that the bandshape of the spectral emission is the same as observed in cathodoluminescence.…”

p-njunction on high-pressure-high-temperature grown single crystal diamond: UV-emission spectra and electrical properties

“…The maximum electrical current of about 20 mA and rectification ratio of ~ 10 7 have been obtained in a p-i-n structure made by ion implantation of natural diamond [5]. But besides strong PL and EL in visible range, holes and electrons injection in diamond provides quite strong exciton recombination band with the photon energy close to indirect band gap value: 5.27 eV [6][7][8][9][10]. The exciton binding energy is about 80 meV in diamond, that is why UV emission band can be observed at high temperatures.…”