We present 3D simulations of melt flow in a Czochralski process of Si single crystal growth with a travelling magnetic field (TMF). The choice of the TMF significantly influences the thermal field in the melt. Using a downwards TMF field the induced convection causes a thermal field with a low radial component of the temperature gradient along the melt surface and a high vertical component below the crystal. Such a thermal field allows the kinetics‐based creation of {110} side facets, which was proven in several experimental runs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)