Some transport properties of transition metal films

Angadi, M. A.

doi:10.1007/bf00585716

Cited by 35 publications

(10 citation statements)

References 186 publications

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“…(1) with l 0 = 12 nm [28] to the data yields the product of scattering centers and their scattering cross-sections, ZK = 0.53 ± 0.03, and the surface roughness amplitude H = (2.6 ± 1.22) nm. For the approximation of l 0 it has to be taken into account that the grain size of all Pd thin films is smaller than the mean free path in Pd bulk, l bulk 0 ¼ 25 nm [27]. Therefore the mean free path will be smaller as well.…”

Section: Resultsmentioning

confidence: 99%

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Electrical resistivity and hydrogen solubility of PdHc thin films

Wagner

Pundt

2010

Acta Materialia

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Section: Resultsmentioning

confidence: 99%

“…C is a geometric correction factor, regarding for the finite size of the probe contact areas and the applied four-point probe geometry. It has been fitted to the gained data under the constriction that thick Pd films (d Pd % 1 lm) will exhibit a resistivity on the order of the bulk value [25,26], q bulk 0 ¼ 108:04 X nm [27].…”

Section: Methodsmentioning

confidence: 99%

Electrical resistivity and hydrogen solubility of PdHc thin films

Wagner

Pundt

2010

Acta Materialia

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“…There are numerous further reports on the resistivity of Ni thin films (see, e.g., the review by Angadi [29]) which are not considered here individually. This is because the results are mostly not presented in the form of resistivity vs. grain size data, but rather just some extracted parameters (mostly grain-boundary reflection coefficient R) are given or the structural characterization was performed by XRD only and, therefore, their discussion will appear in "Appendix B".…”

Section: Ni Resistivity Data Evaluated By the Andrews Methodsmentioning

confidence: 99%

Accounting for the resistivity contribution of grain boundaries in metals: critical analysis of reported experimental and theoretical data for Ni and Cu

Bakonyi

2021

Eur. Phys. J. Plus

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In the present paper, reported literature data on the grain-size dependence of resistivity of Ni and Cu are critically evaluated by two conceptually different methods. One is the phenomenological approach of Andrews (Phys. Lett. 19: 558, 1965) according to which in a polycrystalline metal there is a resistivity contribution inversely proportional to the average grain diameter, the proportionality constant defined as the Andrews parameter A. The other method is the customary Mayadas–Shatzkes (MS) model (Phys Rev B 1: 1382, 1970) yielding a grain-boundary reflection coefficient R. During the analysis, special care was taken to rely only on data for which the surface scattering resistivity contribution was definitely negligibly small and the grain size was determined by direct microscopy imaging. By sorting out with this analysis the most reliable grain-size-dependent resistivity data for polycrystalline Ni and Cu metals with random grain boundaries, we have then derived the current best room-temperature values of the Andrews parameter A, the specific grain-boundary resistivity and the reflection coefficient R. We have also found a fairly good relation between the parameters A and R and compared the experimental values with their theoretical estimates reported in the literature. Then, the conceptual differences between the two approaches are discussed and the deficiencies of the MS model, especially in connection with the validity of Matthiessen’s rule, are highlighted. A major conclusion is that by the Andrews method one can derive a model-independent reliable parameter characterizing the grain-boundary contribution to the resistivity of metals.

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“…To overcome this limitation, researchers have tried to incorporate surface roughness values into the specular scattering coefficient so that p is not a purely fitting parameter to fit the empirical data, but can be calculated based on the roughness value of a scattering surface. [ 57–60 ]…”

Section: Materials Selection For Thin‐metal‐film‐based Transparent Conmentioning

confidence: 99%

Thin‐Metal‐Film‐Based Transparent Conductors: Material Preparation, Optical Design, and Device Applications

Zhang

Park

et al. 2020

Advanced Optical Materials

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Transparent conductors are essential elements in an array of optoelectronic devices. The most commonly used transparent conductor – indium tin oxide (ITO) suffers from issues including poor mechanical flexibility, rising cost, and the need for annealing to achieve high conductivity. Consequently, there has been intensive research effort in developing ITO‐free transparent conductors over the recent years. This article gives a comprehensive review on the development of an important ITO‐free transparent conductor, that is based on thin metal films. It starts with the background knowledge of material selection for thin‐metal‐film‐based transparent conductors and then surveys various techniques to fabricate high‐quality thin metal films. Then, it introduces the spectroscopic ellipsometry method for characterizing thin metal films with high accuracy, and discusses the optical design procedure for optimizing transmittance through thin‐metal‐film‐based conductors. The review also summarizes diverse applications of thin‐metal‐film‐based transparent conductors, ranging from solar cells and organic light emitting diodes, to optical spectrum filters, low‐emissivity windows, and transparent electromagnetic interference coatings.

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Some transport properties of transition metal films

Cited by 35 publications

References 186 publications

Electrical resistivity and hydrogen solubility of PdHc thin films

Electrical resistivity and hydrogen solubility of PdHc thin films

Accounting for the resistivity contribution of grain boundaries in metals: critical analysis of reported experimental and theoretical data for Ni and Cu

Thin‐Metal‐Film‐Based Transparent Conductors: Material Preparation, Optical Design, and Device Applications

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