Some unusual behavior of dielectric properties of SrTiO3 metal organic chemical vapor deposition grown thin films

Abstract

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The Effects of Microwave Postgrowth Processing of BaSrTiO3 Thin Films on Their Dielectric Properties

“…This is due to their temperature and frequency stability, low-tuning voltages, relatively low losses, cost, and their fast response [1,2]. Postprocessing of tunable complex oxide thin films became a common practice to establish or improve dielectric properties of these films [3] grown by such methods as metallo-organic solution deposition (MOSD) [4], RF magnetron sputtering [5][6][7][8][9], metal-organic chemical vapor deposition (MOCVD) [10], and others. In addition to improving the crystallinity of the thin films, this postgrowth processing allows augmenting of the oxygen deficiency in the films through various approaches [11].…”

Preparation and properties of pure crystalline perovskite CeFeO3 thin films with vanadium doping

“…Figure D shows the surface SEM image of annealed Ce 1.08 Fe 0.91 V 0.01 O 3 /STO film is still smooth and crack free, which results from the better lattice matching between film and substrate. Moreover, the thermal expansion coefficient of film is more similar with that of STO (9.4×10 −6 ) than that of SiO 2 . The similar thermal expansion coefficient also results in the integrity of Ce 1.08 Fe 0.91 V 0.01 O 3 /STO film.…”

Semiconducting Metal Oxides: SrTiO3, BaTiO3 and BaSrTiO3 in Gas-Sensing Applications: A Review

“…13 (R g −R 0 )/R 0 -in the paper, the authors used sensitivity calculated from the change in resistance, not a response, unit: a.u. Type of structure simple cubic perovskite structure [24] cubic perovskite-type structure [46] perovskite structure [65,66] Dielectric constant E 0 E 0 = 300 [25,42] dielectric constant depends on the type of synthesis, temperature, frequency and dopants [47,48] At RT E 0 = 2570 [134] E 0 = 420 [135] Dielectric loss mostly < 0.02 [25] 0.003 [134] 0.017 [135] Application of the material -sensors -actuators -electro-optical devices -memory devices with random access -multilayer capacitors [27] -oxygen sensors [28] -temperature sensors [29] -cantilever base for various sensors [30] -ferroelectric memories [56] -electro-optical devices [57] -dielectric capacitors [58] -multilayer capacitors (MLCs) [59] -electromechanical transducers [60,61] -gas sensor applications [62] -electronic components -ferroelectric memories -capacitors -phase shifters [65,66] -gas-sensitive material [67] -multilayer and voltage-tunable capacitors -dynamic random access memories (DRAM) [136] Deposition method -magnetron sputtering [32,33] -atomic layer deposition (ALD) [34,35] -pulsed laser deposition (PLD) [36,37] -metal-organic chemical vapor deposition (MOCVD) [38,39] -laser chemical vapor deposition (LCVD)…”

“…Reducing the size allows researchers to reduce the operating temperature to 40 • C [31]. Among various possibilities to deposit SrTiO 3 such as magnetron sputtering [32,33], atomic layer deposition (ALD) [34,35], pulsed laser deposition (PLD) [36,37], metal-organic chemical vapor deposition (MOCVD) [38,39], laser chemical vapor deposition (LCVD) [40,41] and the sol-gel method [42,43], the sol-gel method seems to be the most suitable since it enables depositing a small grain size with high uniformity and high purity. Nanoforms can be also obtained thanks to the glancing angle deposition technique, for example, with magnetron sputtering technology [44,45].…”