Sonochemical synthesis of supersaturated Ga–Al liquid-alloy fine particles and Al3+-doped γ-Ga2O3 nanoparticles by direct oxidation at near room temperature
“…[13][14][15] It has been shown that impurities can have a decisive influence on the physical and chemical properties of semiconductor materials by theoretical research and experimental research. [16][17][18] Therefore, the doping and/or alloying technology should be an effective choice to adjust the performances in many aspects of b-Ga 2 O 3 films, thereby leading to a breakthrough in b-Ga 2 O 3 devices, which has attracted more and more attention. [19][20][21] Stannum, silicon and germanium are commonly selected as available n-type dopants, and n-type b-Ga 2 O 3 with high electron concentration has been successfully achieved by doping them.…”
Pure and ~7.5 at.% Zn alloyed β-Ga2O3 epitaxial films were epitaxial grown by metal organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by 600 ℃ annealing in oxygen...
“…[13][14][15] It has been shown that impurities can have a decisive influence on the physical and chemical properties of semiconductor materials by theoretical research and experimental research. [16][17][18] Therefore, the doping and/or alloying technology should be an effective choice to adjust the performances in many aspects of b-Ga 2 O 3 films, thereby leading to a breakthrough in b-Ga 2 O 3 devices, which has attracted more and more attention. [19][20][21] Stannum, silicon and germanium are commonly selected as available n-type dopants, and n-type b-Ga 2 O 3 with high electron concentration has been successfully achieved by doping them.…”
Pure and ~7.5 at.% Zn alloyed β-Ga2O3 epitaxial films were epitaxial grown by metal organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by 600 ℃ annealing in oxygen...
“…Yamanaka et al prepared supersaturated Ga-Al microparticles (D = 1.7 µm) et Al 3+ -γGa 2 O 3 (D = 59 nm). The very rapid generation and extinction of hot-spots permitted to prepare a supersatured material, which confirms sonication ans a rapid and greener synthesis methods for these particles [2] . …”
“…Sonication of Ga-Al supersaturated liquid alloy [31] in water was mentioned above, yielding Al 3+ -doped γ-Ga 2 O 3 nanoparticles of ca.60 nm in size.…”
Section: Sonication Of Liquid Gallium-alloysmentioning
confidence: 92%
“…Heat treatment of these crystals caused transformation to β-Ga 2 O 3 , which exhibited efficient photocatalytic decomposition of B under UV light. Yamanaka et al [31] compared the sonication products of Ga-Al supersaturated liquid alloy and liquid gallium in water at 60 ℃. They found that Ga-Al alloy yielded Al 3+ -doped γ-Ga 2 O 3 nanoparticles with an average diameter of 59 nm.…”
Section: Interactions Of Molten Gallium With Watermentioning
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