SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C

Taniguchi, Yasuhiro; Yoshida, Shoji; Egashira, Teruhiko; Kuo, ChihBin; Shie, YiYang; Wang, YuChun; Huang, ChenYu; Tamatsu, Tsuyoshi; Okamoto, Keiji; Hishiki, Masanobu; Sasaki, Yasushi; Owada, Fukuo; Ito, Nobuhiko; Shinagawa, Yutaka; Kuo, ChihMing; Noda, Satoshi; Matsui, Toshikazu; Okuyama, Kosuke

doi:10.1109/imw56887.2023.10145990

2023 IEEE International Memory Workshop (IMW) 2023

DOI: 10.1109/imw56887.2023.10145990

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SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C

Yasuhiro Taniguchi,

Shoji Yoshida,

Teruhiko Egashira

et al.

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SONOS Embedded Flash IP Using Trap-Depth-Controlled SiN Film Enabling Data Retention more than 10 years at 200°C

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