2024
DOI: 10.1021/acsnano.4c03574
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Soret-Effect Induced Phase-Change in a Chromium Nitride Semiconductor Film

Yi Shuang,
Shunsuke Mori,
Takuya Yamamoto
et al.

Abstract: Phase-change materials such as Ge−Sb−Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random-access memory (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and the large Joule heating energy required for the RESET process (amorphization) significantly limit the storage density. This study proposes a phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 10 5 ) and lower RESET energy (o… Show more

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