Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

Takhar, Kuldeep; Kumar, Satyam; Meer, Mudassar; Upadhyay, Bhanu B.; Upadhyay, Prashant; Khachariya, Dolar; Ganguly, Swaroop

doi:10.1016/j.sse.2016.04.005

Cited by 12 publications

(2 citation statements)

References 30 publications

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“…The comparison is performed at the same gate voltage. In this work, gate leakage current density of 1 × 10 −5 A cm −2 is found for NiO x (7.2 nm), which are comparable to ALD deposited dielectric [47][48][49][50][51][52][53][54][55][56][57][58]. To further investigate the scalability of the oxide HEMTs, the f T × L g product is plotted as a function of L g and compared with previously reported values in figure 10 for scalable technology without sacrificing high-frequency behavior.…”

Section: Electrical Characterizationsupporting

confidence: 54%

Performance improvement in NiO _x -based GaN MOS-HEMTs

Meer¹,

Pohekar²,

Parvez³

et al. 2022

Semicond. Sci. Technol.

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We have illustrated the thermal oxidation of Ni as gate dielectrics to improve the characteristics of GaN-based metal oxide semiconductor high electron mobility transistors (MOS-HEMTs). The oxide is formed by a pre-deposition of a thin film followed by oxidation in pure O2 ambient. The formation and thickness of the oxides are confirmed through X-ray photoelectron spectroscopy and transmission electron microscopy. NiOx is found to have an energy band gap of 3.7 eV determined using O 1s energy loss spectra. NiOx is found to provide negative (1.7 eV) valence band offsets with AlGaN. The potential use of the oxides has been confirmed by the significant improvement in drive current, transconductance, subthreshold swing, unity current gain frequency, and gate current leakage over the Schottky Barrier HEMTs. We have observed a positive shift in threshold voltage for NiOx based gate dielectric devices compared to that of the Schottky barrier HEMTs.

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Section: Electrical Characterizationsupporting

confidence: 54%

Performance improvement in NiO _x -based GaN MOS-HEMTs

Meer¹,

Pohekar²,

Parvez³

et al. 2022

Semicond. Sci. Technol.

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“…We have shown that fringe electric fields arising out of a lithographically defined non‐contacting gate can control the 1‐DEG channel transport in these nanowires. The fringe electric field from a non‐contacting terminal, which is usually considered to have detrimental effects , is demonstrated to have the potential to work as the sole gate for a transistor. The large lateral confinement in the nanowires lead to an increased electron 1‐D intersubband separation resulting in room temperature quantum transport in these devices, which manifest as oscillations in the transfer characteristics.…”

Section: Introductionmentioning

confidence: 99%

Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires

Kumar

Khachariya

Meer

et al. 2016

Phys. Status Solidi A

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We have demonstrated effective fringe field control of one‐dimensional electron gas (1‐DEG) in AlGaN/GaN lateral nanowires. The nanowires are site controlled and formed by a combination of dry and anisotropic wet etching. The nanowire dimensions are well controlled and can have a very high length/width aspect ratio of 10 μm/5 nm or larger. The transport is controlled by a fringe gate and shows room temperature quantum transport where gradual filling of 1‐D subbands gets manifested as oscillations in the transconductance. The fringe gate threshold voltage for depletion of one‐dimensional electron gas is found to increase with increasing drain voltage indicating efficient control of 1‐DEG. The transport characteristics and fringe field operation are explained by taking into account quantum capacitance in addition to the conventional geometric capacitance. The effect of nanowire width and fringe gate position is also discussed.

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Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

et al. 2018

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Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

Cited by 12 publications

References 30 publications

Performance improvement in NiO _x -based GaN MOS-HEMTs

Performance improvement in NiO _x -based GaN MOS-HEMTs

Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires

Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

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Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

Cited by 12 publications

References 30 publications

Performance improvement in NiO x -based GaN MOS-HEMTs

Performance improvement in NiO x -based GaN MOS-HEMTs

Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires

Polarization dependent charge control model for microwave performance assessment of AlGaN/GaN/AlGaN double heterostructure HEMTs

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Product

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About

Performance improvement in NiO _x -based GaN MOS-HEMTs

Performance improvement in NiO _x -based GaN MOS-HEMTs