sp3s*Tight-binding parameters for transport simulations in compound semiconductors

Klimeck, Gerhard; Bowen, R. Chris; Boykin, Timothy B.; Cwik, T.

doi:10.1006/spmi.2000.0862

Cited by 104 publications

(89 citation statements)

References 8 publications

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“…This method has been proven to be an effective approach in band structure calculations [9,13,14,15,16,17,18]. The parameters we use are adopted from the published literate [9,13,14,15,16,17,18].…”

Section: Calculation and Resultsmentioning

confidence: 99%

Spin–orbit coupling in bulk GaAs

Weng

2008

Physica E: Low-dimensional Systems and Nanostructures

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We study the spin-orbit coupling in the whole Brillouin zone for GaAs using both the sp 3 s * d 5 and sp 3 s * nearest-neighbor tight-binding models. In the Γ-valley, the spin splitting obtained is in good agreement with experimental data. We then further explicitly present the coefficients of the spin splitting in GaAs L and X valleys. These results are important to the realization of spintronic device and the investigation of spin dynamics far away from equilibrium.

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Section: Calculation and Resultsmentioning

confidence: 99%

Spin–orbit coupling in bulk GaAs

Weng

2008

Physica E: Low-dimensional Systems and Nanostructures

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“…There are ten fitting parameters, E [18], effective masses of electrons and holes at the Γ point [10,19], conduction and valence band edges at both the Γ and X points [20] can be exactly fitted within EBOM. With increasing k, it can reproduce correct band dispersion along the Γ − X direction [21], as shown in Fig.…”

Section: Atomistic Tight-binding Approach To Electronic Structurementioning

confidence: 99%

Atomistic theory of electronic and optical properties ofInAs∕InPself-assembled quantum dots on patterned substrates

Sheng

Hawrylak

2005

Phys. Rev. B

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We report on a atomistic theory of electronic structure and optical properties of a single InAs quantum dot grown on InP patterned substrate. The spatial positioning of individual dots using InP nano-templates results in a quantum dot embedded in InP pyramid. The strain distribution of a quantum dot in InP pyramid is calculated using the continuum elasticity theory. The electron and valence hole single-particle states are calculated using atomistic effective-bond-orbital model with second nearest-neighbor interactions, coupled to strain via Bir-Pikus Hamiltonian. The optical properties are determined by solving many-exciton Hamiltonian for interacting electron and hole complexes using the configuration-interaction method. The effect of positioning of quantum dots using nanotemplate on their optical spectra is determined by a comparison with dots on unpatterned substrates, and with experimental results. The possibility of tuning the quantum dot properties with varying the nano-template is explored.

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“…In this work we use the NEMO3D parametrization of Klimeck et al described in detail in Refs. [14,32,33]. These parametrizations demonstrate that the inclusion of d orbitals into the basis allows to obtain much better fits of the masses and energy gaps to the target material values.…”

Section: The Spmentioning

confidence: 86%

“…The most frequently used parametrizations are given in Refs. [31,32]. In this work we use the NEMO3D parametrization of Klimeck et al described in detail in Refs.…”

Section: The Spmentioning

confidence: 99%