Space charge and thickness dependent dc electrical breakdown of solid dielectrics

Zhao, Junwei

doi:10.1109/ichve.2012.6357154

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…Figure 12 indicates that, for SiO 2 , E bd~( 1/t diel ) s with s = 0.22. The reduction in E bd with increases in t diel is not just a SiO 2 characteristic but seems to be a general trend for all polar solid dielectrics [13] [14].…”

Section: Impact Of Increases In L On Dielectric Breakdown Strengthmentioning

confidence: 84%

Increases in Lorentz Factor with Dielectric Thickness

McPherson¹

2016

WJCMP

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For many years, a Lorentz factor of L = 1/3 has been used to describe the local electric field in thin amorphous dielectrics. However, the exact meaning of thin has been unclear. The local electric field Eloc modeling presented in this work indicates that L = 1/3 is indeed valid for very thin solid dielectrics (tdiel ≤ 20 monolayers) but significant deviations from L = 1/3 start to occur for thicker dielectrics. For example, L ≈ 2/3 for dielectric thicknesses of tdiel = 50 monolayers and increases to L ≈ 1 for dielectric thicknesses tdiel > 200 monolayers. The increase in L with tdiel means that the local electric fields are significantly higher in thicker dielectrics and explains why the breakdown strength Ebd of solid polar dielectrics generally reduces with dielectric thickness tdiel. For example, Ebd for SiO2 reduces from approximately Ebd ≈ 25 MV/cm at tdiel = 2 nm to Ebd ≈ 10 MV/cm at tdiel = 50 nm. However, while Ebd for SiO2 reduces with tdiel, all SiO2 thicknesses are found to breakdown at approximately the same local electric field (Eloc)bd ≈ 40 MV/cm. This corresponds to a coordination bond strength of 2.7 eV for the silicon-ion to transition from four-fold to threefold coordination in the 3 O Si O − ≡ tetrahedral structure.

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Section: Impact Of Increases In L On Dielectric Breakdown Strengthmentioning

confidence: 84%

Increases in Lorentz Factor with Dielectric Thickness

McPherson¹

2016

WJCMP

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“…Figure 4b presented the DC resistivity as a function of electric field and Figure 5b shows the corresponding DC currents of 6 min step tests. As it was discussed earlier, the DC resistivity behavior of the studied coating can be divided into different areas:  electric field below 0.5 V/µm: the resistivity behaves ohmicly, ~ 10 12 Ωm  electric field from 1 V/µm to 8…12 V/µm: the resistivity behaves non-ohmicly  electric field from 8…12 V/µm to 25 V/µm: the resistivity behaves ohmicly at a new region, ~10 9 Ωm  electric field above ~25 V/µm: degradation/prebreakdown region From Figure 5b it can be noticed that the currents of all S-samples stabilized at the first step (~ 1 V/µm) in the end of the measurement period although the values are different. At the second step (~ 2 V/µm) the currents of samples S3 and S4 stabilized while the currents of the other samples started to gradually increase.…”

Section: 32mentioning

confidence: 95%

“…When the applied field was from 0.5 V/µm to 8…12 V/µm, the resistivity was in the nonohmic region and decreased approximately three decades (Figure 4b). At the field strengths from 8…12 V/µm to 25 V/µm the resistivity was settled to ~10 9 Ωm, (except in case of sample S3). When the applied field was close to the breakdown strength, the resistivity started to slightly decrease which can be seen in Figure 4b indicating an initiation of degradation/prebreakdown process approximately from 25 V/µm.…”

Section: Resistivitymentioning

confidence: 99%

“…Anyhow, reports of the effects of ramp rate or of any kind of longer term stressing on the breakdown strength cannot be found in literature. In some cases, the ramp rate is found to have an effect on the breakdown strength of certain insulation materials, with higher ramp rate giving higher breakdown strength for the material due to the space charge phenomena [9], [10].…”

Section: Introductionmentioning

confidence: 99%

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DC Dielectric Breakdown Behavior of Thermally Sprayed Ceramic Coatings

Niittymaki

Suhonen

Metsäjoki

et al. 2017

NORD-IS

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<p>Previous studies of dielectric properties of thermally sprayed insulating ceramic coatings are focused on linearly ramped dielectric breakdown strength as well as<br />DC resistivity, relative permittivity and dielectric loss characterizations. However, reports of the effects of ramp rate or of any kind of long term stressing on the breakdown strength cannot be found in literature. The aim of this paper was to study the DC breakdown behavior of one type of HVOF sprayed alumina coating under different stresses. It can be concluded that the ramp rate of DC breakdown measurement has no remarkably influence on the breakdown strength. The breakdown behavior was also studied using step-by-step tests with two constant step voltages and step durations. The DC resistivity of the alumina coating showed strong dependence on the applied electric field. The resistivity behaved ohmicly below the field strength of ~0.5 V/μm and above ~8…12 V/μm, however, the resistivity decreased approximately three decades in the nonohmic region (0.5 V/μm -->). At electric field strengths above ~25 V/μm, the degradation started in the material leading to breakdown. However, when the step duration was longer (60 min), the degradation process started already slightly below the applied field of 25 V/μm.</p>

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Formation of plasma channel under high-voltage electric pulse and simulation of rock-breaking process

Rao,

Feng,

Ouyang

et al. 2023

Phys. Scr.

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In the context of rock fragmentation, the application of high voltage electric pulses results in the transfer of electrical energy onto the surface of the rock material, leading to a rapid electrical breakdown and the formation of a plasma channel. The ionized plasma expands at a fast velocity, generating a shock wave that causes significant damage to the rock’s integrity. In this study, we develope a numerical model that couples electrical, thermal, and mechanical forces to simulate the formation of plasma channels within rocks due to high-voltage electric pulses. The model’s accuracy is verified through field tests, and the results indicate that the configuration of the high-voltage pulse waveform, electrode spacing, and conductor particles within the rock impact the pathway of plasma channel formation. Prior to the formation of the plasma channel, minimal changes are observed in temperature and stress levels, with the majority of electric pulse energy dedicated to the creation of the plasma channel. Following the establishment of the plasma channel, the application of the electric pulse continues, resulting in notable alterations in temperature and stress levels. When the duration of the action reaches 105 ns, the temperature and stress levels surpass 104 K and 50 MPa, respectively, leading to fracture and extensive damage to the rock. The outcomes derived from the numerical model’s calculations can help to facilitate the cross-integration between physics and civil engineering and contribute to a deeper understanding of the rock fragmentation process under high voltage electric pulses.

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Space charge and thickness dependent dc electrical breakdown of solid dielectrics

Cited by 6 publications

References 9 publications

Increases in Lorentz Factor with Dielectric Thickness

Increases in Lorentz Factor with Dielectric Thickness

DC Dielectric Breakdown Behavior of Thermally Sprayed Ceramic Coatings

Formation of plasma channel under high-voltage electric pulse and simulation of rock-breaking process

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