Space charge characteristics of silicone elastomer for device packaging under positive square wave voltage

Zhang, Jinqiang; Li, Xuebao; Zhao, Zhibin; Cui, Xiang

doi:10.1049/hve2.12263

Cited by 8 publications

References 23 publications

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Enhanced high‐temperature electrical properties and charge dynamics of inorganic/organic silicone elastomer nanocomposites via nanostructure grafting and molecular trap construction

Wang,

Tanaka,

Miyake

et al. 2024

Polymer Composites

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This study introduces a novel strategy to enhance the high‐temperature electrical performance of the silicone elastomer (SE), while ensuring control over its thermal and mechanical properties for SiC device packaging insulation application. For the same, the ultra‐low‐content inorganic/organic SE nanocomposites are prepared and tested (at room temperature and 150°C) by grafting polyhedral oligomeric silsesquioxane (POSS) nanofillers and doping organic semiconductors. It is found that grafting POSS nanofillers enhances the SE's thermal and mechanical properties. Moreover, doping the grafted SE with different organic semiconductors (ITIC, PCBM, and NTCDA) further improves its electrical properties and charge dynamics at 150°C. The optimal doping content for ITIC, PCBM, and NTCDA is found to be 0.05, 0.10, and 0.15 wt%, respectively. Among these, NTCDA exhibits superior electrical performance at 150°C. Particularly, compared to pure SE, NTCDA doping and POSS grafting reduce the electrical conductivity by an order of magnitude and increase the breakdown strength, charge hopping activation energy, and trap energy level by 65.5%, 0.20 eV and 0.73 eV, respectively. This study finds that organic semiconductors outperform nanostructures in inhibiting electron injection and immobilizing free electrons at high temperatures.Highlights Nano‐POSS grafting enhances material properties by reinforced molecular chains. Charge dynamics is studied by space charge and current integrated charge at HT. Organic semiconductors improve electrical properties and charge dynamics at HT. Organic semiconductors outperform nanofillers in immobilizing electrons at HT. The ideal organic semiconductor doping level correlates with its energy gap.

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Enhanced high‐temperature electrical properties and charge dynamics of inorganic/organic silicone elastomer nanocomposites via nanostructure grafting and molecular trap construction

Wang,

Tanaka,

Miyake

et al. 2024

Polymer Composites

View full text Add to dashboard Cite

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Study on space charge accumulation characteristics of silicone elastomer under DC voltage

Zhang,

Li,

Sun

et al. 2024

High Voltage

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The electric field distortion caused by the accumulation of space charge in the insulating dielectric is easy to lead to accelerated ageing and even breakdown. In this paper, the space charge characteristics and the interfacial electric field change with time of silicone elastomer under different polarity DC voltages are studied. The results show that the homopolar charge injection is dominant in the silicone elastomer, and the electric field threshold is less than 4 kV/mm. The accumulation of homopolar charge weakens the interfacial electric field, resulting in the reduction of charge injection, and the interfacial electric field and spatial charge distribution gradually stabilise over time. In addition, the electric field at the interface does not decrease to the charge injection field threshold when it reaches stability. A time‐varying electric field model of the metal‐dielectric interface under a direct current field is derived and a calculation method for the time of charge accumulation to stabilise is proposed, based on the Schottky injection model and the relation between current density and volume charge density. The accuracy of the model is verified by comparing it with the experimental results of the stability time of silicone elastomer. This model is used to estimate the time when space charge accumulation reaches stability by means of the electric field threshold and the interface barrier, which can provide reference for the experimental measurement of space charge.

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Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field

Gao,

He,

et al. 2024

High Voltage

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The insulating properties of silicone gel used for silicon carbide‐insulated gate bipolar transistors encapsulation may deteriorate seriously under ultra‐fast pulsed electric fields. The essence of insulation degradation lies in the deterioration of materials caused by dynamic phenomena at microscopic scale, such as charge trapping and detrapping. Different from the steady‐state operating condition, insulating materials exhibit a sharp decrease in their insulating properties when subjected to a rapidly changing electric field. To investigate the insulation failure of silicone gel materials under an ultra‐fast pulsed electric field, Marcus hopping mechanism for charge response is proposed. By calculating the relaxation time with different defects, we characterise the degradation of the materials. According to the force analysis of space charge, the authors establish a relationship between insulation failures and charge relaxation time. Combined with the experimental results on electrical treeing in silicone gel, the feasibility of the theory is verified. The experimental phenomenon can be well explained, that is, the initial voltage of the electrical trees decreased sharply with shortening the edge time of the pulsed electric field, especially on the nanosecond time scale.

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Space charge characteristics of silicone elastomer for device packaging under positive square wave voltage

Cited by 8 publications

References 23 publications

Enhanced high‐temperature electrical properties and charge dynamics of inorganic/organic silicone elastomer nanocomposites via nanostructure grafting and molecular trap construction

Enhanced high‐temperature electrical properties and charge dynamics of inorganic/organic silicone elastomer nanocomposites via nanostructure grafting and molecular trap construction

Study on space charge accumulation characteristics of silicone elastomer under DC voltage

Degradation induced by charge relaxation in silicone gels under the ultra‐fast pulsed electric field

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