Space-Charge Region Scattering in Indium Monoselenide

Savitskii, P. I.; Kovalyuk, Zakhar D.; Mintyanskii, I. V.

doi:10.1002/1521-396x(200008)180:2<523::aid-pssa523>3.0.co;2-x

Cited by 11 publications

(7 citation statements)

References 20 publications

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“…This implies that another scattering mechanism, significantly affecting the electrical parameters at high temperatures, should be considered. As we had established earlier , the interaction of the carriers with space‐charge regions (SCR) seems to be appropriate as such a mechanism in n‐InSe. An abrupt increase of the concentration of electrons due to their activation from the deep donors decreases their interaction with the SCR and determines the high‐temperature behavior of the mobility.…”

Section: Discussionmentioning

confidence: 88%

Two-band conduction in electron-irradiated n-InSe single crystals

Mintyanskii

Savitskii

Kovalyuk

2014

Phys. Status Solidi B

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The electrical properties of n‐InSe single crystals irradiated with 9.2‐MeV electrons are investigated in the temperature range 80–400 K. The observed extrema in the temperature dependences of the Hall coefficient and the electron mobility are explained by assuming the existence of mixed conduction with the carriers in the 3D conduction band and 2D electron gas. The numerical calculations were carried out by taking into account a redistribution of the carriers between the conduction band and the states of a 2D electron gas and well reproduce the experimental data. A numerical analysis of the temperature dependences of the concentration of 3D electrons within the single donor–single acceptor model and that of the Fermi‐level temperature dependences have shown that n‐InSe irradiated with high‐energy electrons is highly compensated (NA/ND = 0.988–0.998) with a concentration of the donors ND = (0.69–1.2) × 1017 cm−3 and the activation energy of three‐dimensional conduction is 93–139 meV.

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Section: Discussionmentioning

confidence: 88%

Two-band conduction in electron-irradiated n-InSe single crystals

Mintyanskii

Savitskii

Kovalyuk

2014

Phys. Status Solidi B

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“…Early studies have shown that InSe bulk exhibits intrinsic mobility of 10 3 cm 2 /V s at room temperature, which increases up to 10 4 cm 2 /V s at cryogenic temperature, indicating an overwhelming role of phonon scattering in band transport via extended electronic states. , Thinning of InSe results in an appreciable reduction of mobility and a reverse of its temperature dependence. The mobility decreases monotonically with the reduction of temperature, implying the onset of thermally assisted transport.…”

Section: Introductionmentioning

confidence: 99%

High-Mobility InSe Transistors: The Nature of Charge Transport

Tsai

Feng

et al. 2019

ACS Appl. Mater. Interfaces

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InSe is a high-mobility layered semiconductor with mobility being highly sensitive to any surrounding media that could act as a source of extrinsic scattering. However, little effort has been made to understand electronic transport in thin InSe layers with native surface oxide formed spontaneously upon exposure to an ambient environment. Here, we explore the influence of InO x /InSe interfacial trap states on electronic transport in thin InSe layers. We show that wet oxidation (processed in an ambient environment) causes massive deep-lying band-tail states, through which electrons conduct via 2D variable-range hopping with a short localization length of 1–3 nm. In contrast, a high-quality InO x /InSe interface can be formed in dry oxidation (processed in pure oxygen), with a low trap density of 1012 eV–1 cm–2. Metal–insulator transition can be thus observed in the gate sweep of the field-effect transistors (FETs), indicative of band transport predominated by extended states above the mobility edge. A room-temperature band mobility of 103 cm2/V s is obtained. The profound difference in the transport behavior between the wet and dry InSe FETs suggests that fluctuating Coulomb potential arising from trapped charges at the InO x /InSe interface is the dominant source of disorders in thin InSe channels.

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“…21 InSe is a 2D material made of stacked layers of Se-In-In-Se atoms with van der Waals (vdW) bonding between quadruple layers (Figure 1a). In the bulk form, InSe's mobility could be near 10 3 cm 2 /Vs at room temperature (T) and exceeds 10 4 cm 2 /Vs at low T, 23,24 making it another promising candidate for the next generation high performance 2D semiconductor devices. Some recent works also highlight the potential applications of InSe and related III-VI 2D materials in optoelectronics.…”

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confidence: 99%

Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs

et al. 2015

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Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III-VI semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device's field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material's intrinsic transport behavior and the effect of dielectric substrate. The sample's field effect and Hall mobilities over the range of 20-300 K fall in the range of 0.1-2.0 × 10(3) cm(2)/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.

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Space-Charge Region Scattering in Indium Monoselenide

Cited by 11 publications

References 20 publications

Two-band conduction in electron-irradiated n-InSe single crystals

Two-band conduction in electron-irradiated n-InSe single crystals

High-Mobility InSe Transistors: The Nature of Charge Transport

Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs

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Space-Charge Region Scattering in Indium Monoselenide

Cited by 11 publications

References 20 publications

Two-band conduction in electron-irradiated n-InSe single crystals

Two-band conduction in electron-irradiated n-InSe single crystals

High-Mobility InSe Transistors: The Nature of Charge Transport

Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

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Product

Resources

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Intrinsic Electron Mobility Exceeding 10³ cm²/(V s) in Multilayer InSe FETs