2017
DOI: 10.1039/c7ra07311a
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Space charges and negative capacitance effect in organic light-emitting diodes by transient current response analysis

Abstract: Space charge capacitance and the physical mechanism of negative capacitance in organic light-emitting diodes (OLEDs) by transient current response analysis are investigated for the first time.

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Cited by 16 publications
(18 citation statements)
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“…As we can see in Fig. 1a , the turn-on voltage of the three devices is about 3 V. It is relevant to the maximum of the first peak in their capacitance–voltage characteristics, indicating that it makes no difference to the turn-on voltage without AML in D 1 [ 9 11 ]. Figure 1b shows the current density–voltage (J-V) characteristics of the three devices in log–log scale, we divide the J-V curves into three regions, (I) leakage or diffusion-limited current caused by Ohmic contact, (II) volume-controlled current with an exponential distribution of traps, and (III) volume-controlled current with partly filled traps [ 20 ].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As we can see in Fig. 1a , the turn-on voltage of the three devices is about 3 V. It is relevant to the maximum of the first peak in their capacitance–voltage characteristics, indicating that it makes no difference to the turn-on voltage without AML in D 1 [ 9 11 ]. Figure 1b shows the current density–voltage (J-V) characteristics of the three devices in log–log scale, we divide the J-V curves into three regions, (I) leakage or diffusion-limited current caused by Ohmic contact, (II) volume-controlled current with an exponential distribution of traps, and (III) volume-controlled current with partly filled traps [ 20 ].…”
Section: Resultsmentioning
confidence: 99%
“…The inflection point of the first peak in capacitance–voltage (C-V) curves has been reported to be corresponded to the turn-on voltage of OLEDs. It is also a very sensitive probe of carrier accumulation caused by the barrier in the interface of organic layers or the imbalance of charge injection and transport in devices [ 9 17 ]. Meanwhile, transient electroluminescence (EL) has also been the subject of intense technological as well as fundamental research, because transient EL studies have generated insight into the internal working mechanism in OLEDs.…”
Section: Introductionmentioning
confidence: 99%
“…Guan et al pointed out that the C – V curve is affected by the carrier injection rate and consumption rate i.e., the higher C value resulted from the faster carrier injection rate than the carrier consumption rate. The negative capacitance was also reported as a consequence of the synchronized change of the internal accumulated carrier’s transport states, and the applied small ac signal arises from the differences in the mobility of carriers in organic layers . The summary values for the equivalent circuit models are listed in the Supporting Information (Figure S2 and Table S3).…”
Section: Resultsmentioning
confidence: 99%
“…So the responsible mechanism for NC is trap-mediated recombination, [18], [20], [59], [60] where the charge carrier consumption rate is faster than the replenishment rate of the charge carriers. [13], [18], [19], [25], [29], [31], [61] B. Evidence of trap states in the SiQD-LEDs…”
Section: A Negative Capacitance In Siqd-ledsmentioning
confidence: 99%
“…In particular, its behavior at different temperature and frequency modulations is important. [11], [29] In this contribution, we provide a comprehensive study of the capacitance characteristics of hexyl functionalized SiQD-LEDs. In doing so, we found an NC in SiQD-LEDs for the first time.…”
mentioning
confidence: 99%