The interaction of electrons and phonons is strongly enhanced in ultrashort-period GaAs/AlAs superlattices. The enhancement is caused by an increase of the exciton binding energy with decreasing superlattice period. The photoluminescence spectra of indirect-gap superlattices exhibit a zero-phonon line due to scattering by defects and/or interfacial roughness as well as pronounced phonon sidebands. ͓S0163-1829͑97͒07015-X͔