Spatial Atomic Layer Deposition

Muñoz‐Rojas, David; Nguyễn, Việt Hương; Huerta, César Masse de la; Jiménez, Carmen; Bellet, Daniel

doi:10.5772/intechopen.82439

Cited by 28 publications

(29 citation statements)

References 90 publications

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“…This approach is known as spatial PEALD (PE-s-ALD) and allows us to achieve higher throughput values. 12 , 13 In addition, PE-s-ALD can be performed at atmospheric pressure, which can be desired for applications where cost and volume are highly important, such as (flexible) displays, batteries, and photovoltaic devices. 14 − 20 …”

Section: Introductionmentioning

confidence: 99%

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

et al. 2021

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An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100–250 °C, the process demonstrates self-limiting growth with a growth per cycle (GPC) between 0.12 and 0.14 nm and SiO2 films exhibiting material properties on par with those reported for low-pressure PEALD. Gas-phase infrared spectroscopy on the reactant exhaust gases and optical emission spectroscopy (OES) on the plasma region are used to identify the species that are involved in the ALD process. Based on the identified species, we propose a reaction mechanism where BDEAS molecules adsorb on −OH surface sites through the exchange of one of the amine ligands upon desorption of diethylamine (DEA). The remaining amine ligand is removed through combustion reactions activated by the O2 plasma species leading to the release of H2O, CO2, and CO in addition to products such as N2O, NO2, and CH-containing species. These volatile species can undergo further gas-phase reactions in the plasma as indicated by the observation of OH*, CN*, and NH* excited fragments in OES. Furthermore, the infrared analysis of the precursor exhaust gas indicated the release of CO2 during precursor adsorption. Moreover, this analysis has allowed the quantification of the precursor depletion yielding values between 10 and 50% depending on the processing parameters. Besides providing insights into the chemistry of atmospheric-pressure PE-s-ALD of SiO2, our results demonstrate that infrared spectroscopy performed on exhaust gases is a valuable approach to quantify relevant process parameters, which can ultimately help evaluate and improve process performance.

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Section: Introductionmentioning

confidence: 99%

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

et al. 2021

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“…[26] The quality of thin films deposited by SALD has been shown through their intense application to photovoltaics. [27,28] While AP-SALD can be implemented in many different ways, [20,29] the close-proximity approach initially developed by Levi et al is particularly interesting (Figure 1a). [30] It is based on a manifold injection head (Figure 1b) in which the different precursors and inert gas are distributed along parallel slots over a moving substrate.…”

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confidence: 99%

Gas‐Phase 3D Printing of Functional Materials

Huerta

Nguyễn

Sekkat

et al. 2020

Adv Materials Technologies

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Furthermore lithography and patterning are often performed in cleanrooms, thus adding to the cost of the final devices. In this context, there have been much progress in bringing the resolution of inkjet printing down to the micrometer level. [6] And other new bottom-up strategies are being developed, for example based on microfluidics and interfacial convective assembly. [7,8] Another new approach to so-called area-selective deposition (ASD) has been developed in the last years in the field of atomic layer deposition (ALD). [3,9] In ALD, solid-gas, surface-limited, selfterminating reactions take place. [10-12] This results in very compact and continuous thin films with a sub-nanometer thickness control and unique conformality, key assets for engineering the interfaces and surfaces of different functional materials and devices. [13-16] Given the surface-limited nature of ALD, several strategies can be implemented to control the reactivity of ALD precursors toward different surfaces to generate selectivity and result in ASD. These involve the use of a substrate with different materials (growth inhibition or delay taking place in one of them) or the use of self-assembled monolayers to block the growth in certain parts of the surface, as recently reviewed by Mackus et al. [17] While these approaches are very appealing and have proven to be efficient, there is still the need to have a surface with different materials, and in most cases a prepatterning step is necessary. Also, some of the ASD approaches require intermediate etching steps. [18] Finally, these approaches suffer from the inherent low deposition rate of ALD and the use of expensive vacuum equipment. In the last years, spatial ALD (SALD) has established itself as a high-throughput, low-cost alternative to conventional ALD. SALD is based on the spatial separation of precursors, as opposed to the sequential (temporal) separation in ALD. [19,20] Thus, precursors are continuously injected in different locations, which are spatially separated by an inert gas region. As the sample is exposed to the different regions, the standard ALD cycle is reproduced. Because no purge steps are needed, SALD can be up to two orders of magnitude faster than ALD. [21,22] In addition, SALD can be performed at atmospheric pressure (AP-SALD), thus resulting more convenient for scalingup than vacuum-based ALD. [23-25] But because SALD is based on the same surface-limited, self-terminating chemistry than Spatial atomic layer deposition (SALD) is a recent approach 100 times faster than conventional atomic layer deposition (ALD), even at atmospheric pressure. Previous works exploited these assets focussing on high-rate, large-area deposition for scaling-up into mass production. Conversely, this work shows that SALD indeed represents an ideal platform for area-selective deposition of functional materials by proper design and miniaturization of close-proximity SALD heads. In particular, the potential offered by 3D printing is used to fabricate low-cost customized close-proximity heads, w...

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“…However, the extremely low GPC values of conventional ALD are not suitable for mass-production. In this regard, it is worth attempting to apply the recently proposed spatial ALD (SALD), which allows a much faster deposition rate, to complex nanostructures [101][102][103]. The remaining technical issue is to ensure the deposition of inorganic thin films at low temperatures.…”

Section: Discussionmentioning

confidence: 99%

Atomic Layer Deposition of Inorganic Thin Films on 3D Polymer Nanonetworks

Ahn

Jeon

et al. 2019

Applied Sciences

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Atomic layer deposition (ALD) is a unique tool for conformally depositing inorganic thin films with precisely controlled thickness at nanoscale. Recently, ALD has been used in the manufacture of inorganic thin films using a three-dimensional (3D) nanonetwork structure made of polymer as a template, which is pre-formed by advanced 3D nanofabrication techniques such as electrospinning, block-copolymer (BCP) lithography, direct laser writing (DLW), multibeam interference lithography (MBIL), and phase-mask interference lithography (PMIL). The key technical requirement of this polymer template-assisted ALD is to perform the deposition process at a lower temperature, preserving the nanostructure of the polymer template during the deposition process. This review focuses on the successful cases of conformal deposition of inorganic thin films on 3D polymer nanonetworks using thermal ALD or plasma-enhanced ALD at temperatures below 200 °C. Recent applications and prospects of nanostructured polymer–inorganic composites or hollow inorganic materials are also discussed.

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Spatial Atomic Layer Deposition

Cited by 28 publications

References 90 publications

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Gas‐Phase 3D Printing of Functional Materials

Atomic Layer Deposition of Inorganic Thin Films on 3D Polymer Nanonetworks

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Spatial Atomic Layer Deposition

Cited by 28 publications

References 90 publications

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Gas‐Phase 3D Printing of Functional Materials

Atomic Layer Deposition of Inorganic Thin Films on 3D Polymer Nanonetworks

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Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy