Spatial electron-spin splitting in single-layered semiconductor microstructure modulated by Dresselhaus spin–orbit coupling

Abstract

Combining theory and computation, we explore Goos-Hänchen effect for electron in single-layered semiconductor microstructure (SLSM) modulated by Dresselhaus spin-orbit coupling (SOC). GH displacement depends on electron spins thank to Dresselhaus SOC, therefore, electron spins can be separated from space domain and spin-polarized electrons into semiconductors can be realized. Both magnitude and sign of spin polarization ratio change with electron energy, in-plane wave vector, strain engineering and semiconductor-layer thickness. Spin polarization ratio approaches up to maximum at resonance, however, no electron-spin polarization occurs in the SLSM for zero in-plane wave vector. More importantly, spin polarization ratio can be manipulated by strain engineering or semiconductor-layer thickness, giving rise to a controllable spatial electron-spin splitter in the field of semiconductor spintronics.