Spatial evolution of hot-electron relaxation in quantum Hall conductors

Kaya, İsmet I.; Nachtwei, G.; Klitzing, K. von; Eberl, K.

doi:10.1103/physrevb.58.r7536

Cited by 37 publications

(41 citation statements)

References 9 publications

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“…Then, because of the drift velocity of the electrons, the electronic temperature is spread into the sample according to a mechanism which is well described by the BSEH model [22,23]. Kaya et al [44] showed evidence indeed of the slow relaxation of the hot electrons while they drift along Hall bars.…”

Section: B the Contact Resistance As An Electronic Thermometermentioning

confidence: 99%

“…This would correspond to the observation made by Shaskin et al [43], who clearly showed evidence that domains of high electric field move along the sample while the current amplitude is varied. However, even if there is evidence that these high electric fields regions play a key role in the onset of the breakdown [44], the detailed physical mechanism of their extension and propagation remains to be developed.…”

Section: A High Electric Field Domain Near the Sourcementioning

confidence: 99%

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Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the i = 2 plateau which is used in all metrological measurements of the von Klitzing constant R K . A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the current and the magnetic field polarities. Several samples with different width have been studied and we observed that the critical current for the contact resistance increases with the width of the Hall bar as previously observed for the critical current of the longitudinal resistance. The critical currents exhibit either a linear or a sublinear increase. All our observations are interpreted in the current understanding of the Quantum hall effect brekdown. Our analysis suggests that a heated region appears at the current contact, develops and then extends in the whole sample while increasing the current. Consequently, we propose to use the contact resistance as an electronic thermometer for the Hall fluid.

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Section: B the Contact Resistance As An Electronic Thermometermentioning

confidence: 99%

Section: A High Electric Field Domain Near the Sourcementioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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show abstract

“…A number of mechanisms for the QHE breakdown have been proposed thus far [24][25][26][27][28][29][30][31][32] , and results of experiments have revealed substantial properties of the breakdown, including electron overheating through the avalanchetype electron scattering, 33,34 the spatial gradient of the effective electron temperature along the electron path 35 , the typical length of the electron heating and cooling, 36,37 and the time scale of the breakdown. [38][39][40] Although these experiments have uncovered important information regarding the QHE breakdown, its mechanism remains to be clarified.…”

Section: Introductionmentioning

confidence: 99%

Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown

et al. 2013

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We performed noise measurements in a two-dimensional electron gas to investigate the nonequilibrium quantum Hall effect (QHE) state. While excess noise is perfectly suppressed around the zero-biased QHE state reflecting the dissipationless electron transport of the QHE state, considerable finite excess noise is observed in the breakdown regime of the QHE. The noise temperature deduced from the excess noise is found to be of the same order as the energy gap between the highest occupied Landau level and the lowest empty one. Moreover, unexpected finite excess noise is observed at a finite source-drain bias voltage smaller than the onset voltage of the QHE breakdown, which indicates finite dissipation in the QHE state and may be related to the prebreakdown of the QHE.

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“…Longitudinal resistivity makes a rather gradual transition into dissipative regime with the increased current. Critical currents at filling factors ν = ±2 between the probes (6-7), (7)(8) at B = 11 T , T = 1.4 K. Inset shows ρ15,76 vs jx for ν = −2 with the full range of currents. b) σxx versus 1/jx in semilog scale.…”

Section: A)mentioning

confidence: 99%

“…b) σxx versus 1/jx in semilog scale. Inset shows fittings at filling factors ν = ±2 between the probes (6-7), (7)(8) at B = 11 T , T = 1.4 K for the region jx = 1 − 2 A/m. Fig.…”

Section: A)mentioning

confidence: 99%

Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices

Yanik

Kaya

2013

Solid State Communications

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We have analyzed the breakdown of the quantum Hall effect in 1 µm wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized value is weakly dependent on the longitudinal resistivity up to current density of 5 A/m, where the Hall resistance remains quantized even when the longitudinal resistance increases monotonously with the current. Then a collapse in the quantized resistance occurs while longitudinal resistance keeps its gradual increase. The exponential increase of the conductivity with respect to the current suggests impurity mediated inter-Landau level scattering as the mechanism of the breakdown. The results are interpreted as the strong variation of the breakdown behavior throughout the sample due to the randomly distributed scattering centers that mediates the breakdown.

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Spatial evolution of hot-electron relaxation in quantum Hall conductors

Cited by 37 publications

References 9 publications

Behavior of the contacts of quantum Hall effect devices at high currents

Behavior of the contacts of quantum Hall effect devices at high currents

Observation of finite excess noise in the voltage-biased quantum Hall regime as a precursor for breakdown

Local breakdown of the quantum Hall effect in narrow single layer graphene Hall devices

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