Spatial influence of paramagnetic molecules on magnetic tunnel junction-based molecular spintronic devices (MTJMSD)

Savadkoohi, Marzieh; D’Angelo, Christopher; Grizzle, Andrew; Dahal, Bishnu; Tyagi, Pawan

doi:10.1016/j.cplett.2022.139667

Cited by 1 publication

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This exchange coupling resulted in intriguing current suppression and a spin-dependent photovoltaic effect [23]. Recent molecular spintronics studies have indicated that molecules' ability to covalently bond to the electrode can be considered a tool to yield novel device behaviors [26,29,30,[56][57][58][59]. The following sections describe the basics of the GaAs surface and its interactions with S-like passivants.…”

Section: Concept Of Combining Surface Passivation With Tunnel Junctio...mentioning

confidence: 99%

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Tyagi

2023

Mater. Res. Express

Self Cite

View full text Add to dashboard Cite

GaAs is well known for its extremely high electron mobility and direct band gap. Owing to the technological advances in silicon-based technology, GaAs has been limited to niche areas. This paper discusses the application of GaAs in molecular electronics and spintronics as a potential field for considering this amazing but challenging material. GaAs is challenging because its surface is characterized by a high density of surface states, which precludes the utilization of this semiconducting material in mainstream devices. Sulfur(S)-based passivation has been found to be significantly useful for reducing the effect of dangling bonds and was researched thoroughly. GaAs applications in molecular spintronics and electronics can benefit significantly from prior knowledge of GaAs and S interactions because S is a popular functional group for bonding molecular device elements with different semiconductors and metals. In this article, the problem associated with the GaAs surface is discussed in a tutorial form. A wide variety of surface passivation methods has been briefly introduced. We attempted to highlight the significant differences in the S-GaAs interactions for different S passivation methods. We also elaborate on the mechanisms and atomic-scale understanding of the variation in surface chemistry and reconstruction due to various S passivation methods. It is envisioned that GaAs and thiol-terminated molecule-based novel devices can exhibit novel device characteristics and bring the added advantage of S-based passivation.

show abstract

Section: Concept Of Combining Surface Passivation With Tunnel Junctio...mentioning

confidence: 99%

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Tyagi

2023

Mater. Res. Express

Self Cite

View full text Add to dashboard Cite

show abstract

Spatial influence of paramagnetic molecules on magnetic tunnel junction-based molecular spintronic devices (MTJMSD)

Cited by 1 publication

References 15 publications

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

New value of old knowledge: sulphur-based GaAs surface passivation and potential GaAs application in molecular electronics and spintronics

Contact Info

Product

Resources

About