Heterostructures of 0D/2D materials synergistically combine the advantages of two different materials, and photodetectors (PDs) based on such heterostructures demonstrate superior detection properties as compared to those based on each individual material. Here, a facile solution method is proposed for the fabrication of 0D/2D heterostructures to overcome the limitations of the traditional chemical vapor deposition method. The 0D PbS nanocrystals (NCs) are epitaxially grown from 2D‐PbI2 nanosheet templates by a simple wet‐chemical sulfuration process. The resulting heterojunction PDs demonstrate wide detection range up to 2000 nm, a fast photoresponse of ≈400 µs, and a specific detectivity of more than 1012 Jones. The superior device performances are attributed to the underneath PbI2 layer, which can not only be used as the precursor layer but also help to passivate the defect states of PbS NCs. More importantly, the developed Structured II device with Au–PbI2 Schottky contact effect can suppress the dark current of PD to extend its depletion region and improve the response speed. Overall, this study demonstrates a novel strategy for the growth of 0D/2D heterostructures in conjunction with fast near‐infrared detection, which surmount the limitations of photoconductive detectors in terms of large‐scale synthesis and response speed.