Spatial resolution of silicon microstrip detector for particles with large incident angle

3 Semiconductor Detectors

“…Charge division between adjacent strips makes the spatial precision better than the pitch so that precisions of 5-6 μπι for both sides of double-sided microstrip detectors are obtained for high energy particles. Even for particles impinging the detector at a high angle of incidence (up to 75 degrees) can a good spatial resolution (40 μπι) be maintained [129]. As the time response is roughly the same as that of a simple detector (nanoseconds), high detection rates can be expected.…”

“…This implies that an insulating layer and a second metallization level are deposited over the strips. In additon, biasing resistors can also be integrated on the devices by using polysilicon [128][129][130], Charge division [131] between 2 or 3 floating strips adjacent to a biased one can also be used to limit the number of readout electrodes. A more precise control of the electrical properties of the strips (impedance, inter strip capacitance) and low noise electronics are then necessary [124], Other approaches combining both resistive charge division and microstrip structure have been proposed to reduce the readout number of electrodes [132],…”