Spatial Revelations of Chemical and Electrochemical Kinetics into Defect Generations during Semiconductor Processing

Abstract

The unique fundamentals of kinetic phenomena during semiconductor processing have been extensively reviewed for the first time. A comprehensive three-dimensional (3D) view provides several insights into chemical transportations along wafer surface and electrical cross-sections in device stacks. Multiple case studies are detailed in order to illustrate the effectiveness of connecting these unique dynamics with critical defects generated. These spatial revelations have made significant contributions to our solid technology development as well as quality manufacturing.