Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions

Chang, Chiating; Zeng, Fanzi; Li, J. X.; Dong, Wenxiang; Hu, Yuandong; Li, Guoqiang

doi:10.1039/c6ra27406d

Cited by 4 publications

(6 citation statements)

References 29 publications

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“…If we use Ca Tf 2 -PEO/P3HT as an element for signal handling, the computing efficiency and resolution will be enhanced significantly without increasing the system and circuit complex. We have found that a simple parallel connection of a device composed of single electrolyte and a device composed of an electrolyte/semiconductor heterojunction can achieve liner summation of synaptic weights . Combining these types of devices, synaptic computation indicated by neuroscientists can be achieved …”

Section: Results and Discussionmentioning

confidence: 99%

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Zeng

Chang

2017

J. Phys. Chem. C

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In this study, we established the energy alignment of the Ca(CF3SO3)2-doped poly(ethylene oxide)/poly(3-hexylthiophene-2,5-diyl), i.e., CaTf 2-PEO/P3HT, heterojunction. The concentration polarization of ions could dynamically adjust the energy level of the PEO complex, similar to light-emitting electrochemical cells (LECs). When bias is loaded in the orientation from CaTf 2-PEO-PEO to P3HT, the charge diffusions appears and the internal electric field (E in) is generated. Simultaneously, the accumulation of the ions also induces the interface stress which could be released partially after some ions are doped into the P3HT layer. The interface polarization and doping are found to be modulated by the external field under various loading rates. These two effects interact together thereby determining the size of E in and resulting in the negative differential resistance (NDR) phenomenon. The NDR peak increases with the sweeping times under conditions of slow loading rates, while it decreases under conditions of extremely high loading rates. The responses of the system and the related weight modifications of the NDR peaks are tested using a train of triangular pulses with fixed amplitude and varied loading rates. The weight obtained by calculating the 40th response is invariably positive for low loading rates, while it potentiates under low frequency stimulations but depresses under high frequency stimulations, i.e., frequency selectivity, for the conditions of very high loading rates. Our results reveal that the organic electrolyte/semiconductor heterojunction could be a simple system for analyzing and computing complicated signals in high resolutions.

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Section: Results and Discussionmentioning

confidence: 99%

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Zeng

Chang

2017

J. Phys. Chem. C

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“…Currently, STP that uses electrical stimulation to achieve both STD and STF has appeared in synaptic devices, such as transistors and memristors. [31][32][33][34] Wan et al used electrical stimulation in an IGZO-based transistor to simulate STD and STF. The dynamic double-electron-layer modulation of the ion-conducting electrolyte by protons ensures that the connection scheme determines the high-pass filtering and low-pass filtering functions.…”

Section: Doi: 101002/aisy202200019mentioning

confidence: 99%

Retina‐Inspired Two‐Terminal Optoelectronic Neuromorphic Devices with Light‐Tunable Short‐Term Plasticity for Self‐Adjusting Sensing

Geng

Zhuge

et al. 2022

Advanced Intelligent Systems

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In current optical imaging devices, complex peripheral circuits are required to obtain clear and true images, which leads to limited power and area efficiency. Inspired by the visual processing in retina, an optoelectronic neuromorphic device with short‐term plasticity (STP) can realize self‐adjustment of the visual system to real time in response to the external stimuli, including light controlled short‐term facilitation (STF) and short‐term depression (STD). Herein, an optoelectronic synaptic device based on a simple Au/ZnS/Pt structure is found to show both synaptic STD and STF under light stimulation. STD originates from photoexcited carriers trapped by defects in the ZnS film, whereas STF results from photocurrent rising due to trap filling via previous electrical stimulation. Moreover, the STP of the device exhibits excellent stability and repeatability. In addition, this optoelectronic device can be used to adjust the sharpness of the view according to different brightness levels through STD and STF. The realization of self‐adjustment through STP of the emerging optoelectronic neuromorphic device may pave the way for bionic systems facing complex environments.

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“…In addition, the RS in these materials is generally caused by the migration of ions [22,23]. This process is suitable for mimicking the internal dynamics of the synaptic weight change, which is also related to the migration of ions between pre- and post-synaptic neurons [24,25]. However, these materials usually show limitations on the application due to state fluctuation and abrupt current leakage introduced by conductive filaments, which impose challenges in reducing energy consumption and implementing large-scale neural networks.…”

Section: Introductionmentioning

confidence: 99%

Synaptic memory devices from CoO/Nb:SrTiO ₃ junction

Zhao

Shang

et al. 2019

R. Soc. open sci.

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Non-volatile memristors are promising for future hardware-based neurocomputation application because they are capable of emulating biological synaptic functions. Various material strategies have been studied to pursue better device performance, such as lower energy cost, better biological plausibility, etc. In this work, we show a novel design for non-volatile memristor based on CoO/Nb:SrTiO 3 heterojunction. We found the memristor intrinsically exhibited resistivity switching behaviours, which can be ascribed to the migration of oxygen vacancies and charge trapping and detrapping at the heterojunction interface. The carrier trapping/detrapping level can be finely adjusted by regulating voltage amplitudes. Gradual conductance modulation can therefore be realized by using proper voltage pulse stimulations. And the spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in the device. Our results indicate the possibility of achieving artificial synapses with CoO/Nb:SrTiO 3 heterojunction. Compared with filamentary type of the synaptic device, our device has the potential to reduce energy consumption, realize large-scale neuromorphic system and work more reliably, since no structural distortion occurs.

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Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions

Abstract: Short-term plasticity of a pair of organic heterogeneous junctions could be linearly summed from those of the two sources.

Cited by 4 publications

References 29 publications

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Retina‐Inspired Two‐Terminal Optoelectronic Neuromorphic Devices with Light‐Tunable Short‐Term Plasticity for Self‐Adjusting Sensing

Synaptic memory devices from CoO/Nb:SrTiO ₃ junction

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Spatial summation of the short-term plasticity of a pair of organic heterogeneous junctions

Abstract: Short-term plasticity of a pair of organic heterogeneous junctions could be linearly summed from those of the two sources.

Cited by 4 publications

References 29 publications

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Modulation of Response Patterns by Loading-Rate-Dependent Interface Polarization and Doping

Retina‐Inspired Two‐Terminal Optoelectronic Neuromorphic Devices with Light‐Tunable Short‐Term Plasticity for Self‐Adjusting Sensing

Synaptic memory devices from CoO/Nb:SrTiO 3 junction

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Product

Resources

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Synaptic memory devices from CoO/Nb:SrTiO ₃ junction