Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the limits of self-assembled deformation-diffusion model

Abstract

The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In x Ga 1−x As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the profile of spatial-temporal distribution of vacancies (interstitial atoms) in the stressed nanoheterosystem GaAs/In x Ga 1−x As/GaAs is calculated. It is shown that in the case of a stationary state (t > 5τ