The fluorine-containing block copolymers of poly(styrene-block-2,2,2-trifluoroethyl methacrylate)(PS-b-PTFEMA) and poly(4-hydroxystyrene-block-2,2,2-trifluoroethyl methacrylate) (PHOST-b-PTFEMA), which both are capable of both top-down and bottom-up lithography were developed. These block copolymers were synthesized by either anionic or ATRP living polymerization methods. Comparison is made to patternable block copolymers of poly(hydroxystyrene-block-α-methyl styrene) (PHOST-b-PAMS) and poly(hydroxyethyl methacrylate)-block-poly(methyl methacrylate) (PHEMA-b-PMMA). Thin films of the block copolymers were subjected to lithographic processing using e-beam and DUV radiation combined with vacuum processing to create integrated patterns such as dots in lines. Solvent annealing was used to create long range order.