Spatially homogeneous ferromagnetism of (Ga, Mn)As

Dunsiger, S. R.; Carlo, J. P.; Goko, T.; Nieuwenhuys, G.J.; Prokscha, T.; Suter, A.; Morenzoni, E.; Chiba, Daichi; Yu, Ning; Tanikawa, Tomoyuki; Matsukura, F.; Ohno, Hiroshi; Ohe, Jun–ichiro; Maekawa, Sadamichi; Uemura, Y. J.

doi:10.1038/nmat2715

Cited by 80 publications

(88 citation statements)

References 20 publications

(20 reference statements)

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“…Note that this is again in striking contrast with the vertical gradient of magnetic anisotropies reported, for example, in Son et al 46 on a B500-nm-thick unoptimized material. (For another direct evidence of the crucial role of the growth parameters on the material uniformity, compare also results of previous muon spin relaxation measurements in Dunsiger et al 47 and in Storchak et al 48 ).…”

Section: Resultsmentioning

confidence: 66%

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

et al. 2013

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(Ga,Mn)As is at the forefront of spintronics research exploring the synergy of ferromagnetism with the physics and the technology of semiconductors. However, the electronic structure of this model spintronics material has been debated and the systematic and reproducible control of the basic micromagnetic parameters and semiconducting doping trends has not been established. Here we show that seemingly small departures from the individually optimized synthesis protocols yield non-systematic doping trends, extrinsic charge and moment compensation, and inhomogeneities that conceal intrinsic properties of (Ga,Mn)As. On the other hand, we demonstrate reproducible, well controlled and microscopically understood semiconducting doping trends and micromagnetic parameters in our series of carefully optimized epilayers. Hand-in-hand with the optimization of the material synthesis, we have developed experimental capabilities based on the magneto-optical pumpand-probe method that allowed us to simultaneously determine the magnetic anisotropy, Gilbert damping and spin stiffness constants from one consistent set of measured data.

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Section: Resultsmentioning

confidence: 66%

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

et al. 2013

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“…Small oscillation amplitudes in both systems may be due to domain structures and spread of demagnetizing field in polycrystalline specimens. We also note that ZF-MuSR spectra did not show oscillation in ferromagnetic Li(Zn,Mn)As 7 and (Ga,Mn)As 15 . In all these DMS systems, random substitution of Mn at Zn or Ga sites generates a spatially random distribution of Mn moments, which makes the local field at the muon site highly random even in the ferromagnetic ground state.…”

Section: Muon Spin Relaxation (Musr)mentioning

confidence: 56%

New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the ‘122’ iron-based superconductors

et al. 2013

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Diluted magnetic semiconductors have received much attention due to their potential applications for spintronics devices. A prototypical system (Ga,Mn)As has been widely studied since the 1990s. The simultaneous spin and charge doping via hetero-valent (Ga 3 þ ,Mn 2 þ ) substitution, however, resulted in severely limited solubility without availability of bulk specimens. Here we report the synthesis of a new diluted magnetic semiconductor (Ba 1 À x K x )(Zn 1 À y Mn y ) 2 As 2 , which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr 2 Si 2 (122) structure. Holes are doped via (Ba 2 þ , K 1 þ ) replacements, while spins via isovalent (Zn 2 þ ,Mn 2 þ ) substitutions. Bulk samples with x ¼ 0.1 À 0.3 and y ¼ 0.05 À 0.15 exhibit ferromagnetic order with T C up to 180 K, which is comparable to the highest T C for (Ga,Mn)As and significantly enhanced from T C up to 50 K of the '111'-based Li(Zn,Mn)As. Moreover, ferromagnetic (Ba,K)(Zn,Mn) 2 As 2 shares the same 122 crystal structure with semiconducting BaZn 2 As 2 , antiferromagnetic BaMn 2 As 2 and superconducting (Ba,K)Fe 2 As 2 , which makes them promising for the development of multilayer functional devices.

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“…[1][2][3][4][5][6] It is now widely accepted that the ferromagnetism found in (Ga,Mn)As system arises from the hole mediated interaction between the local magnetic moments of the Mn, and is homogeneous. 4,7 For practical applications, exploring diluted magnetic semiconductors (DMSs) with Curie temperature (T C ) at room temperature is a necessity. It is predicted that T C above room temperature would be achieved with higher concentration of carriers and spins in materials.…”

Section: Introductionmentioning

confidence: 99%

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

Chen

Deng

et al. 2016

AIP Advances

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We report the synthesis and characterization of a series of bulk forms of diluted magnetic semiconductors Li(Zn1-x-yCoxMny)As with a crystal structure close to that of III-V diluted magnetic semiconductor (Ga,Mn)As. No ferromagnetic order occurs with single (Zn,Co) or (Zn, Mn) substitution in the parent compound LiZnAs. Only with co-doped Co and Mn ferromagnetic ordering can occur at the Curie temperature ∼40 K. The maximum saturation moment of the this system reached to 2.17μB/Mn, which is comparable to that of Li (Zn,Mn)As. It is the first time that a diluted magnetic semiconductor with co-doping Co and Mn into Zn sites is achieved in “111” LiZnAs system, which could be utilized to investigate the basic science of ferromagnetism in diluted magnetic semiconductors. In addition, ferromagnetic Li(Zn,Co,Mn)As, antiferromagnetic LiMnAs, and superconducting LiFeAs share square lattice at As layers, which may enable the development of novel heterojunction devices in the future.

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Spatially homogeneous ferromagnetism of (Ga, Mn)As

Cited by 80 publications

References 20 publications

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

The essential role of carefully optimized synthesis for elucidating intrinsic material properties of (Ga,Mn)As

New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the ‘122’ iron-based superconductors

Li(Zn,Co,Mn)As: A bulk form diluted magnetic semiconductor with Co and Mn co-doping at Zn sites

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