Spatially inhomogeneous oxygen precipitation in silicon

Bulyarskiĭ, S. V.; Светухин, В. В.; Prikhodko, Oleg

doi:10.1134/1.1187839

Cited by 16 publications

(10 citation statements)

References 13 publications

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“…According to [17], to estimate the size of narrow band PbS inclusions in similar samples, a model of precipitation during thermal annealing due to the decomposition of the solid solution suggested in [25] was used. The precipitation of narrow band PbS inclusions in CdS was simulated with the following equations:…”

Section: Estimation Of Pbs Inclusion Sizesmentioning

confidence: 99%

Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

et al. 2015

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The formation of a lead arachidate film was studied at interfaces of an aqueous solution of lead nitrate with the air and with a solid hydrophilic substrate. The efficiency of lead transfer onto a semiconductor substrate by the horizontal lift method was estimated. Optimal conditions of the fabrication of lead arachidate monolayers with minimum oxygen content were found in order to use these layers as an impurity source for CdS. It was shown that an optimal relationship between the photosensitivity of CdS films and losses induced by accelerated electrons is attained due to the formation of PbS precipitates with the radius of at least 3 nm in a topmost layer with the thickness of about the depth of maximal energy dissipation of the ionizing radiation.

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Section: Estimation Of Pbs Inclusion Sizesmentioning

confidence: 99%

Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

et al. 2015

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“…The Fokker-Plank equation is used to describe a process taking place in accordance with Eq. (2) [6] @Cði; tÞ @t ¼ @ @i ððkðiÞ NðtÞ À gðiÞÞ Cði; tÞÞ þ @ 2 2@i 2 ððkðiÞ NðtÞ þ gðiÞÞ Cði; tÞÞ ; ð5Þ…”

Section: Theory Of Decay Of Solid Solutionsmentioning

confidence: 99%

“…Equation (8) (8) can be solved exactly. The detailed description of deriving asymptotic equations is given in [6]. Comparison of Eqs.…”

Section: Theory Of Decay Of Solid Solutionsmentioning

confidence: 99%

Fractal Lithium Cluster Growth in Germanium

Bulyarskiĭ

Светухин

Agafonova

et al. 2002

phys. stat. sol. (b)

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“…A theoretical analysis of the thermodynamic and kinetic conditions controlling the formation of microdefects, i.e., oxygen-containing precipitates in silicon, was reported earlier [5][6][7][8]. The authors [5,6] pointed out the following important factors of this process:…”

Section: Introductionmentioning

confidence: 98%

“…Analysis [5,6] does not provide detailed solid solution decomposition mechanisms which seem to control the energy parameters of critical-size precipitate formation reactions, this critical precipitate size being temperature dependent.…”

Section: Introductionmentioning

confidence: 99%

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis

Бублик¹,

Воронова²,

Щербачев³

et al. 2019

MoEM

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Gettering is defined as a process by which metal impurities in the device region are reduced by localizing them in predetermined, passive regions of the silicon wafer. Internal or intrinsic gettering is an effective way to reduce the contamination in active regions. The generation of internal getters is based on the decomposition of the supersaturated oxygen solid solution in silicon, which favours the formation of a complex defect system in silicon that consists of various precipitate/dislocation agglomerates. Regularities of microdefect formation during oxygen solid solution decomposition in silicon have been studied. We show that actual solid solution supersaturation, temperature and heat treatment duration determine the structure of the solid solution. Combining these factors, including heat treatment parameters, one can control solid solution decomposition rate and SiOx precipitate sizes and quantity. The methods of X-ray diffuse scattering and transmission electron microscopy have shown high efficiency for studying the effect of heat treatment in crystals. For annealing at 450 °C, solid solution decomposition occurs at high supersaturation degrees, and concentration inhomogeneity regions may form at an early decomposition stage over the actual annealing time (up to 40 h). With an increase in the temperature of subsequent annealing to 650 °C, local regions with above-average oxygen supersaturation degrees increase the efficiency of oxygen solid solution decomposition. Further, an increase in annealing temperature to T > 1000 °С results in a more intense generation of the largest precipitates at the expense of the smaller ones. Once the precipitate sizes become sufficiently large, the elastic stresses start to relax, leading to partial incoherence and the generation of dislocations around the particles. This type of defect structure seems to be the most efficient getter.

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Spatially inhomogeneous oxygen precipitation in silicon

Cited by 16 publications

References 13 publications

Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

Fabrication of ultrathin impurity source to minimize radiation-induced losses in photosensitive films of CdS

Fractal Lithium Cluster Growth in Germanium

Regularities of microdefect formation in silicon during heat treatment for internal getter synthesis

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