2007
DOI: 10.1002/adfm.200700066
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Spatially Localized Formation of InAs Quantum Dots on Shallow Patterns Regardless of Crystallographic Directions

Abstract: We report on the ability to grow InAs quantum dots into patterns of any shape. We specifically demonstrate the spatial localization of InAs quantum dots on mesa and trench patterns varying from line, square and triangle patterns on GaAs (100) substrates by molecular beam epitaxy. Based on the underlying science, this growth approach enables the localization of InAs QDs on GaAs (100) by controlling the sidewall facets and InAs monolayer coverage.

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Cited by 19 publications
(19 citation statements)
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“…In this thermodynamic equilibrium system, in order to keep the energy of the whole system in the lowest state, bigger droplets tend to absorb nearby adatoms to lower the surface energy, and thus, the size can grow larger and the density can be reduced until reaching the equilibrium. Thus, this type of size and density evolution was witnessed in Ga and In metal droplets [35,37,38] and nanostructures [39-41] on various semiconductor substrates.…”
Section: Resultsmentioning
confidence: 99%
“…In this thermodynamic equilibrium system, in order to keep the energy of the whole system in the lowest state, bigger droplets tend to absorb nearby adatoms to lower the surface energy, and thus, the size can grow larger and the density can be reduced until reaching the equilibrium. Thus, this type of size and density evolution was witnessed in Ga and In metal droplets [35,37,38] and nanostructures [39-41] on various semiconductor substrates.…”
Section: Resultsmentioning
confidence: 99%
“…In short, as the annealing temperature was increased, the average density gradually decreased and the decrease in density was compensated by expansion of dimension, i.e., AH and LD. This trend, increased droplet dimensions associated with decreased density along with increased fabrication temperature, is a conventional behavior of metal droplets [30-32] and even of quantum structures and nanostructures [33-35] on various semiconductor surfaces. With increased annealing temperature, the surface diffusion as well as the diffusion length can be further enhanced, which consequently can result in increased dimension of metal droplets.…”
Section: Resultsmentioning
confidence: 99%
“…In molecular beam epitaxy (MBE) processes, this can be achieved by defining the nucleation sites for impinging atoms using patterning the surface. Patterning is usually accomplished by lithographic techniques, such e-beam lithography [7][8][9][10][11], nanoimprint lithography [12], interference lithography, photolithography [13], or atomic force microscopy (AFM) lithography [14].…”
Section: Introductionmentioning
confidence: 99%