Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence

Prabaswara, Aditya; Stowe, David; Janjua, Bilal; Ng, Tien Khee; Anjum, Dalaver H.; Longo, Paolo; Zhao, Chao; ElAfandy, Rami T.; Li, Xiaohang; Alyamani, Ahmed Y.; El‐Desouki, Munir M.; Ooi, Boon S.

doi:10.1117/1.jnp.11.026015

Cited by 4 publications

(3 citation statements)

References 45 publications

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“…In our case, since we partially removed the Al-rich shell layer after passivation, the red-shift would be expected. We believe the subject of the red-shift mechanism after passivation is worthy of a separate detailed investigation, for example, by using nanoscale cathodoluminescence and TEM, as reported by Aditya et al…”

Section: Resultsmentioning

confidence: 85%

“…17 In our case, since we partially removed Al-rich shell layer after passivation, the redshift would be expected. We believe the subject of the redshift mechanism after passivation is worthy of a separated detailed investigation, for example, by using nanoscale Cathodoluminescence and TEM, as reported by Aditya et al 24 There are various explanations for such PL emission enhancement after sample passivation. A flattened top surface of the nanowire indicated that we have possibly removed a portion (~5-10 nm) of the p-GaN layer.…”

Section: Methodsmentioning

confidence: 85%

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Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

et al. 2017

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Spontaneously-grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still suffer from low efficiency partially because of the strong surface recombination caused by surface states, i.e., oxidized surface and high density surface states. Several surface passivation methods have been introduced to reduce surface non-radiative recombination by using complex and toxic chemicals. Here, we present an effective method to suppress such undesirable surface recombination of the AlGaN nanowires via diluted potassium hydroxide (KOH) solution; a commonly used chemical process in semiconductor fabrication which is barely used as surface passivation solution in self-assembled nitride-based nanowires. The transmission electron microscopy investigation on the samples reveals almost intact nanowire structures after the passivation process. We demonstrated an approximately 49.7% enhancement in the ultraviolet light output power after 30-s KOH treatment on AlGaN nanowires grown on titanium-coated silicon substrates. We attribute such a remarkable enhancement to the removal of the surface

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Section: Resultsmentioning

confidence: 85%

Section: Methodsmentioning

confidence: 85%

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

et al. 2017

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“…The use of tightly focused electron beams allows for collecting spectral information directly from nanoscale samples with spatial resolution limited by the size of the focused electron beam. CL found applications in plasmonics, 7,[9][10][11][187][188][189][190][191][192][193][194] photonics, 195,196 semiconductors, [197][198][199] electron-beam lithography, 200 and tomographic reconstruction. 201 Additionally, the combination of spatial and spectral resolution can be combined to measure the dispersion of CL effects such as SPR.…”

Section: Cathodoluminescence Spectroscopy and Polarimetry Techniquesmentioning

confidence: 99%

Free-electron-light interactions in nanophotonics

Roques‐Carmes¹,

Kooi²,

Yang³

et al. 2022

Preprint

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When impinging on optical structures or passing in their vicinity, free electrons can spontaneously emit electromagnetic radiation, a phenomenon generally known as cathodoluminescence. Free-electron radiation comes in many guises: Cherenkov, transition, and Smith-Purcell radiation, but also electron scintillation, commonly referred to as incoherent cathodoluminescence. While those effects have been at the heart of many fundamental discoveries and technological developments in high-energy physics in the past century, their recent demonstration in photonic and nanophotonic systems has attracted a lot of attention. Those developments arose from predictions that exploit nanophotonics for novel radiation regimes, now becoming accessible thanks to advances in nanofabrication. In general, the proper design of nanophotonic structures can enable shaping, control, and enhancement of free-electron radiation, for any of the above-mentioned effects. Free-electron radiation in nanophotonics opens the way to promising applications, such as widely-tunable integrated light sources from x-ray to THz frequencies, miniaturized particle accelerators, and highly sensitive high-energy particle detectors. Here, we review the emerging field of free-electron radiation in nanophotonics. We first present a general, unified framework to describe free-electron light-matter interaction in arbitrary nanophotonic systems. We then show how this framework sheds light on the physical underpinnings of many methods in the field used to control and enhance free-electron radiation. Namely, the framework points to the central role played by the photonic eigenmodes in controlling the output properties of free-electron radiation (e.g., frequency, directionality, and polarization). We then review experimental techniques to characterize free-electron radiation in scanning and transmission electron microscopes, which have emerged as the central platforms for experimental realization of the phenomena described in this Review. We further discuss various experimental methods to control and extract spectral, angular, and polarization-resolved information on free-electron radiation. We conclude this Review by outlining novel directions for this field, including ultrafast and quantum effects in free-electron radiation, tunable short-wavelength emitters in the ultraviolet and soft x-ray regimes, and free-electron radiation from topological states in photonic crystals.

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InGaN-based nanowires development for energy harvesting and conversion applications

Zhang

Min

Gnanasekar

et al. 2021

Journal of Applied Physics

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This Tutorial teaches the essential development of nitrogen-plasma-assisted molecular-beam-epitaxy grown InGaN nanowires as an application-inspired platform for energy harvesting and conversion applications by growing dislocation- and strain-relieved axial InGaN-based nanowires. The Tutorial aims to shed light on the interfacial, surface, electrical, and photoelectrochemical characteristics of InGaN nanowires through nanoscale and ultrafast characterizations. Understanding the interrelated optical-physical properties proved critical in the development of renewable-energy harvesting and energy conversion devices. Benefiting from their unique aspect ratio and surface-to-volume ratio, semiconductor properties, and piezoelectric properties, the group-III-nitride nanowires, especially InGaN nanowires, are promising for clean energy conversion applications, including piezotronic/piezo-phototronic and solar-to-clean-fuel energy-conversion.

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Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence

Cited by 4 publications

References 45 publications

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

Surface-Passivated AlGaN Nanowires for Enhanced Luminescence of Ultraviolet Light Emitting Diodes

Free-electron-light interactions in nanophotonics

InGaN-based nanowires development for energy harvesting and conversion applications

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