Spatially resolved stress analysis using Raman spectroscopy

Atkinson, A.; Jain, Sumit

doi:10.1002/(sici)1097-4555(199910)30:10<885::aid-jrs485>3.3.co;2-x

Cited by 20 publications

(25 citation statements)

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“…6. The spectral convolutive algorithm can be set, as follows (Atkinson and Jain, 1999;Lipkin and Clarke, 1995;Pezzotti, 2011): where Δω l ðr ′ 0 ; z 0 Þ ¼ ω l ðr ′ 0 ; z 0 ÞÀω 0;l is the frequency shift observed for the l-th Raman band at each location of the geometrical center of the Raman probe with respected to the frequency recorded at an unperturbed location far away from the indentation crack, ω 0;l ðzÞ; I l;c ðzÞ and ω l;c ðzÞ are the deconvoluted profiles of Raman intensity and frequency shift along the thickness of the oxide scale for the l-th Raman band; and, the threedimensional response function for the Raman probe is given as:…”

Section: 3mentioning

confidence: 99%

Bioinertness and fracture toughness evaluation of the monoclinic zirconia surface film of Oxinium™ femoral head by Raman and cathodoluminescence spectroscopy

Leto¹,

Zhu

Matsubara

et al. 2014

Journal of the Mechanical Behavior of Biomedical Materials

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Section: 3mentioning

confidence: 99%

Bioinertness and fracture toughness evaluation of the monoclinic zirconia surface film of Oxinium™ femoral head by Raman and cathodoluminescence spectroscopy

Leto¹,

Zhu

Matsubara

et al. 2014

Journal of the Mechanical Behavior of Biomedical Materials

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“…To compare the Raman measurement results with the finite-element modeling, weighted averages of the local strain must be considered, depending on the laser beam spot size and penetration depths for the particular excitation wave lengths. Assuming the beam to have a Gaussian distribution with width 2B and focused at z 0 in the out-of-plane direction with a depth distribution parameter p, the intensity of the light scattered at the point (x 0 ,y 0 ,z 0 ) follows [10,11] ( )…”

Section: Measurement Results and Modelingmentioning

confidence: 99%

Surface-sensitive strain analysis of Si/SiGe line structures by Raman and UV-Raman spectroscopy

et al. 2009

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Strained silicon is applied to the transistor channel of leading-edge CMOS devices, significantly increasing carrier mobility and requiring measurement techniques to characterize strain. In the investigation reported here, we apply Raman spectroscopy using excitation by both visible and UV light in conjunction with finite-element analysis to analyze the strain distribution adjacent to embedded silicon-germanium (SiGe) line structures in silicon wafers. In agreement with the modeling results, a strong strain depth gradient is obtained for the silicon lines, whereas the strain within the SiGe regions depends weakly on the depth. We show further how the stress tensor and its distribution in both SiGe and Si regions is modified when changing the geometry of the line structures. For the strained Si line region, a sensitive dependence of the stress state on the geometry is obtained. International SEMATECH Manufacturing Initiative, and ISMI are servicemarks of SEMATECH, Inc. SEMATECH, and the SEMATECH logo are registered servicemarks of SEMATECH, Inc. All other servicemarks and trademarks are the property of their respective owners.

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“…The Raman signal, in fact, originates from a scattering volume of several µm 3 , which may comprise not only numerous domains with different orientations, but even grains. 85,86 equation 4can be written as…”

Section: Characterisation Of Texture By Raman Spectroscopymentioning

confidence: 99%

Microscopic texture characterisation in piezoceramics

Deluca

2016

Advances in Applied Ceramics

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In polycrystalline piezoelectric ceramics, ferroelectric domain texture is the most important parameter influencing the attainable electromechanical performance. High piezoelectric properties are obtained when the maximum poling of the material is achieved. This condition can be favoured by modifying material composition, poling routes or by proper grain texturing. Hence, it is necessary to characterise domain texture, in order to develop piezoceramics with improved performance. In this review, an outline of the methods for ferroelectric domain texture determination will be given, with focus on microscopic techniques. The advantages and complementarity of methods like X-ray and neutron diffraction, electron diffraction, and Raman spectroscopy will be highlighted.

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Spatially resolved stress analysis using Raman spectroscopy

Cited by 20 publications

References 0 publications

Bioinertness and fracture toughness evaluation of the monoclinic zirconia surface film of Oxinium™ femoral head by Raman and cathodoluminescence spectroscopy

Bioinertness and fracture toughness evaluation of the monoclinic zirconia surface film of Oxinium™ femoral head by Raman and cathodoluminescence spectroscopy

Surface-sensitive strain analysis of Si/SiGe line structures by Raman and UV-Raman spectroscopy

Microscopic texture characterisation in piezoceramics

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