Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Schön, Daniel; Menzel, Stephan

doi:10.1002/adfm.202213943

Cited by 4 publications

References 44 publications

(145 reference statements)

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Resistive Switching Acceleration Induced by Thermal Confinement

Sarantopoulos,

Lange,

Rivadulla

et al. 2024

Adv Elect Materials

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Enhancing the switching speed of oxide‐based memristive devices at a low voltage level is crucial for their use as non‐volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to accelerate the switching speed often result in an energy trade‐off, leading to an increase in the minimum working voltage. In this study, an innovative solution is presented: the introduction of a low thermal conductivity layer placed within the active electrode, which impedes the dissipation of heat generated during the switching process. The result is a notable acceleration in the switching speed of the memristive model system SrTiO3 by a remarkable factor of 103, while preserving the integrity of the switching layer and the interfaces with the electrodes, rendering it adaptable to various filamentary memristive systems. The incorporation of HfO2 or TaOx as heat‐blocking layers not only streamlines the fabrication process but also ensures compatibility with complementary metal‐oxide‐semiconductor technology.

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Resistive Switching Acceleration Induced by Thermal Confinement

Sarantopoulos,

Lange,

Rivadulla

et al. 2024

Adv Elect Materials

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Thermal Characterization of Ferroelectric Al_1–xB_xN for Nonvolatile Memory

Kang,

Casamento,

Shoemaker

et al. 2024

ACS Appl. Mater. Interfaces

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Boron (B)-substituted wurtzite AlN (Al 1−x B x N) is a recently discovered wurtzite ferroelectric material that offers several advantages over ferroelectric Hf 1−x Zr x O 2 and PbZr 1−x Ti x O 3 . Such benefits include a relatively low growth temperature as well as a thermally stable, and thickness-stable ferroelectric polarization; these factors are promising for the development of ferroelectric nonvolatile random-access memory (FeRAM) that are CMOS-compatible, scalable, and reliable for storing data in harsh environments. However, wurtzite ferroelectric materials may undergo exacerbated self-heating upon polarization switching relative to other ferroelectric materials; the larger energy loss is anticipated due to the higher coercive field and remanent polarization. This work provides insight into the polarization switching-induced self-heating of future FeRAM based on Al 1−x B x N. It was experimentally observed that the thermal conductivity of Al 1−x B x N thin films drops from 40.9 W m −1 K −1 to 4.35 W m −1 K −1 (which is 2 orders of magnitude lower than that of bulk AlN) when the B composition (x) increases from 0 to 0.18. The transient thermal response of an Al 0.93 B 0.07 N metal−ferroelectric−metal (MFM) capacitor was investigated using micro-Raman thermometry and validated via device thermal modeling. Further simulation studies reveal that the large heat generation rate and the low thermal conductivity is predicted to induce an instantaneous temperature rise that may exceed 150 °C in a FeRAM device based on a 5 nm thick Al 1−x B x N film at GHz frequency switching. In addition, thermal crosstalk within a FeRAM cell array exacerbates the selfheating, resulting in a predicted steady-state temperature rise that is an order of magnitude higher than that of a single bit-cell.

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High-temperature tolerant TaOX/HfO2 self-rectifying memristor array with robust retention and ultra-low switching energy

Ren,

Xue,

Zhang

et al. 2024

Applied Physics Letters

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Due to the heat generation during operations in high-density three-dimensional (3D) integrated chips, a high-temperature tolerant and high-performance self-rectifying memristor (SRM) is a promising candidate for 3D integration. Here, we investigated the high-temperature characteristics of Ta/TaOX/HfO2/Pt SRMs with a 250 nm feature size in an 8 × 8 crossbar array (CBA). The SRMs exhibit high uniformity and can be operated repeatedly at Set (4 V/2 μs) and Reset (-2 V/1 μs) pulses for more than 104 cycles resulting in ultra-low switching energy (5.86 aJ for Set and 77.2 aJ for Reset). High yield of the array indicates the reliable preparation processes. Remarkably, the CBA is capable of stably resistive switching at high temperatures from 300 to 475 K. At 300 K, the SRM shows large nonlinearity (NL, ∼1.4 × 104) and rectification ratio (RR, ∼8.8 × 103) as well as high scalability (330 Mbit); at 475 K, the NL and RR of the SRM can still maintain above 400, and the scalability still reaches 71 Kbit. Moreover, our SRM passed a high-temperature retention test of over 5 × 104 s at 438 K. Segmented fittings of the I–V curves of the SRM at different temperatures were performed, concluding that large NL and RR attributed to the Schottky barriers at TaOX/HfO2 and Pt/HfO2 interfaces, respectively. Our work furnishes a feasible solution for high-density 3D integrated memristors in high-temperature application scenarios represented by automotive-grade chips.

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Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Cited by 4 publications

References 44 publications

Resistive Switching Acceleration Induced by Thermal Confinement

Resistive Switching Acceleration Induced by Thermal Confinement

Thermal Characterization of Ferroelectric Al_1–xB_xN for Nonvolatile Memory

High-temperature tolerant TaOX/HfO2 self-rectifying memristor array with robust retention and ultra-low switching energy

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Spatio‐Temporal Correlations in Memristive Crossbar Arrays due to Thermal Effects

Cited by 4 publications

References 44 publications

Resistive Switching Acceleration Induced by Thermal Confinement

Resistive Switching Acceleration Induced by Thermal Confinement

Thermal Characterization of Ferroelectric Al1–xBxN for Nonvolatile Memory

High-temperature tolerant TaOX/HfO2 self-rectifying memristor array with robust retention and ultra-low switching energy

Contact Info

Product

Resources

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Thermal Characterization of Ferroelectric Al_1–xB_xN for Nonvolatile Memory