Spatio-Temporal Modeling and Device Optimization of Passively Mode-Locked Semiconductor Lasers

Abstract

I would like to thank Jan Hausen and Felix Köster for proofreading this manuscript, countless scientific discussions, and enjoyable lunch and coffee breaks. I also thank Ulrike Wieland for the final proofreading of this thesis. Many thanks go to all the other current and former members of the AG Lüdge, among them especially André Röhm, Lina Jaurigue, David Schicke, Christoph Redlich, Larissa Bauer, and Roland Aust, for being supportive and providing a friendly work environment. Moreover, I would like to thank Andrea Schulze for promptly solving all arising bureaucratic issues. I would like to thank Stefan Breuer, Christoph Weber, and Dominik Auth for our fruitful experimentaltheoretical collaboration on the mode-locked three-section quantum-dot laser, the many discussions on mode-locking, and the ongoing exchange of ideas. I would like to thank Dominik Waldburger, Cesare Alfieri and Ursula Keller for our experimental-theoretical collaboration on the V-shaped semiconductor laser and the in-depth discussion of the estimation and interpretation of the timing jitter in passively mode-locked lasers. I am grateful for the support provided by the SFB787 and the 'School of Nanophotonics', which have offered many interesting seminars and workshops and allowed me to participate in multiple scientific conferences. Finally, I would like to thank Uwe Bandelow for taking the time to be the external reviewer on the examining board for this thesis.

Optimizing the Cavity-Arm Ratio of V-Shaped Semiconductor Disk Lasers

“…To self-consistently describe the laser at the time scales required for a net-gain stability analysis, we use a multiple-delay differential equation model, which we have presented and derived in Refs. [4,28,29]. The model is obtained from a traveling-wave framework, which takes the forward and backward propagating light beams and the carrier dynamics inside the gain and absorber chips into account.…”

“…The model is obtained from a traveling-wave framework, which takes the forward and backward propagating light beams and the carrier dynamics inside the gain and absorber chips into account. Integrating those quantities within the comoving frame of the field propagation and applying a Lorentzian filter to model the gain spectrum yields delaydifferential equations for the electric field E at the output coupler and the integrated inversion densities G and Q for the gain and absorber chip [28,29]:…”