H-BiVO4–x:Mo was successfully
deposited on microwire-structured silicon substrates, using indium
tin oxide (ITO) as an interlayer and BiOI prepared by electrodeposition
as precursor. Electrodeposition of BiOI, induced by the electrochemical
reduction of p-benzoquinone, appeared to proceed
through three stages, being nucleation of particles at the base and
bottom of the microwire arrays, followed by rapid (homogeneous) growth,
and termination by increasing interfacial resistances. Variations
in charge density and morphology as a function of spacing of the microwires
are explained by (a) variations in mass transfer limitations, most
likely associated with the electrochemical reduction of p-benzoquinone, and (b) inhomogeneity in ITO deposition. Unexpectedly,
H-BiVO4–x:Mo on microwire substrates
(4 μm radius, 4 to 20 μm spacing, and 5 to 16 μm
length) underperformed compared to H-BiVO4–x:Mo on flat surfaces in photocatalytic tests employing sulfite
(SO32–) oxidation in a KPi buffer solution
at pH 7.0. While we cannot exclude optical effects, or differences
in material properties on the nanoscale, we predominantly attribute
this to detrimental diffusion limitations of the redox species within
the internal volume of the microwire arrays, in agreement with existing
literature and the observations regarding the electrodeposition of
BiOI. Our results may assist in developing high-efficiency PEC devices.