Special conductivity effects in amorphous hydrogenated silicon

Haneman, D.; Zhang, D.H.

doi:10.1016/0169-4332(88)90370-4

Cited by 7 publications

(1 citation statement)

References 22 publications

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“…Here, is estimated to be 72 min at 293 K and depends on temperature, with a value of 0.47 at 293 K. This long decay time means that the photoexcited carriers, electrons or holes, do not recombine quickly with each other. This type of residual decay has also been reported by Kakalios and Fritzsche 8) and Haneman and Zhang 9) in multilayered hydrogenated amorphous silicon (a-Si:H) films.…”

Section: Photocurrent In Inert Ar Atmospheresupporting

confidence: 82%

Photoconductive Characteristics of Hydro-Oxygenated Amorphous Titanium Oxide Films Prepared by Remote Plasma-Enhanced Chemical Vapor Deposition

Sakaguchi

Shimakawa

Hatanaka

2006

jjap

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The photoconductive characteristics of amorphous titanium oxide films (a-TiOx:OH) prepared by remote plasma-enhanced (RPE) chemical vapor deposition, in inert Ar atmosphere with/without a small amount of oxygen, have been studied. In inert Ar atmosphere without oxygen, the residual decay of photocurrent (long decay time) is observed after removing UV irradiation. On the other hand, in inert Ar atmosphere with a small amount of oxygen, the photocurrent under UV irradiation is influenced strongly by an environmental gas with oxygen gas. The maximum of photocurrent (photosensitivity) is nearly inversely proportional to oxygen partial pressure, suggesting that the present films are useful for sensors of environmental oxygen gases. The decay of photocurrent, after removing UV irradiation, follows a stretched exponential function. The effective decay time τ is nearly inversely proportional to oxygen partial pressure. The results will be discussed in terms of the surface reaction of oxygen gas on the present films.

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Section: Photocurrent In Inert Ar Atmospheresupporting

confidence: 82%