Special Issue: Silicon Carbide: From Fundamentals to Applications

Кукушкин, С. А.

doi:10.3390/ma14051081

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…Silicon carbide (SiC) has attracted significant attention in recent years owing to its outstanding electrical, mechanical, and thermal properties. As a result, SiC is commonly employed in many fields due to its incorporation into power devices and optoelectronics [ 1 , 2 , 3 , 4 , 5 ]. Over 200 SiC polytypes are known to exist, with cubic (3C-SiC) and hexagonal (4H-SiC or 6H-SiC) −modified compounds being the most commonly used; these structural differences significantly influence the electrical properties and potential applications of each polytype.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of the Discoloration Switching Phenomenon of 4H-SiC Single Crystals Grown by PVT Method Using ToF-SIMS and Micro-Raman Analysis

Kim,

Kim

et al. 2024

Materials

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The discoloration switching appearing in the initial and final growth stages of 4H-silicon carbide (4H-SiC) single crystals grown using the physical vapor transport (PVT) technique was investigated. This phenomenon was studied, investigating the correlation with linear-type micro-pipe defects on the surface of 4H-SiC single crystals. Based on the experimental results obtained using time-of-flight secondary ion mass spectrometry (ToF-SIMS) and micro-Raman analysis, it was deduced that the orientation of the 4H-SiC c-axis causes an axial change that correlates with low levels of carbon. In addition, it was confirmed that the incorporation of additional elements and the concentrations of these doped impurity elements were the main causes of discoloration and changes in growth orientation. Overall, this work provides guidelines for evaluating the discoloration switching in 4H-SiC single crystals and contributes to a greater understanding of this phenomenon.

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