Special Issue: Silicon Nanodevices

Radamson, Henry H.; Wang, Guilei

doi:10.3390/nano12121980

Cited by 5 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Scherrer's equation is extensively used in materials science as it offers a facile way to calculate the size of crystallites within a sample. The analysis is based on the broadening of X-ray diffraction peaks occurred upon the changes in the crystallite's lateral dimensions [40]. Hence, the average crystallite size (D) of all sintered BT-xGTNPs samples was estimated using Scherrer's equation expressed in Eq.…”

Section: Hip-sinteredbt-xgtnpssamplesmentioning

confidence: 99%

Enhancing the thermoelectric properties for hot-isostatic-pressed Bi2Te3 nano-powder using graphite nanoparticles

Mansour,

Nakamura,

AbdEl-Moneim

2024

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Bismuth telluride (Bi2Te3) is a promising thermoelectric material produced commercially. However, its poor electrical conductivity and low figure of merit, caused by grain boundaries and high thermal conductivity, limit its effectiveness in powder metallurgy production. Herein, effects of adding Graphite nanoparticles (GTNPs) to Bi2Te3 on thermoelectric properties were studied. Three ratios of GTNPs (0.2, 0.35, 0.5 wt%) were added to ball-milled Bi2Te3 nano-powder. The hot isostatic pressing (HIP) sintering technique was employed to prepare the pristine Bi2Te3 and the BT-xGTNPs samples for testing. The crystallographic measurements showed a reduction in the crystallinity of the BT-xGTNPs samples compared to the pure Bi2Te3, whereas the electron microscopy measurements showed smaller grain sizes. This was also confirmed with an increase in the samples’ relative density implying the formation of nano-sized grains. Full electrical, thermal, and thermoelectric measurements were performed and comprehensively discussed in this report for all samples in the temperature range from room temperature (RT) to 570 K. The measurements demonstrated an enhancement for x = 0.35 wt% GTNPs at 540 K up to 43% in the power factor and 51% in the ZT compared to pristine Bi2Te3, which was attributed to the optimum grain size, the lower grain boundaries, and better electrical and thermal conductivity aroused from the precise addition of GTNPs. The best electrical conductivity of ~ 8.2 × 104 S/m and lowest thermal conductivity of ~ 1 W/m·K for the Bi2Te3-containing 0.35 wt% GTNPs at RT even though the sample with 0.5 wt% attained the highest Seebeck coefficient of 154 µV/T at 540 K.

show abstract

Section: Hip-sinteredbt-xgtnpssamplesmentioning

confidence: 99%

Enhancing the thermoelectric properties for hot-isostatic-pressed Bi2Te3 nano-powder using graphite nanoparticles

Mansour,

Nakamura,

AbdEl-Moneim

2024

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

show abstract

“…However, the large lattice mismatch between Si and Ge(GeSn) is the main hurdle for the high-performance Ge(GeSn) APDs. To balance the multiplication effect and lattice mismatch problem, the SiGe layer is also an important candidate for the multiplication region due to its CMOS process compatibility, relatively strong avalanche effect, and smaller lattice mismatch with Ge and GeSn [ 160 , 161 , 162 , 163 ]. Moreover, SiGeC is a conspicuous choice for the multiplication region, which is helpful for the temperature coefficient of resistance and low noise level [ 164 , 165 ].…”

Section: Swir Apds Focal Plane Arrays (Fpas)mentioning

confidence: 99%

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Miao¹,

Lin²,

Li³

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

Among photodetectors, avalanche photodiodes (APDs) have an important place due to their excellent sensitivity to light. APDs transform photons into electrons and then multiply the electrons, leading to an amplified photocurrent. APDs are promising for faint light detection owing to this outstanding advantage, which will boost LiDAR applications. Although Si APDs have already been commercialized, their spectral region is very limited in many applications. Therefore, it is urgently demanded that the spectral region APDs be extended to the short-wavelength infrared (SWIR) region, which means better atmospheric transmission, a lower solar radiation background, a higher laser eye safety threshold, etc. Up until now, both Ge (GeSn) and InGaAs were employed as the SWIR absorbers. The aim of this review article is to provide a full understanding of Ge(GeSn) and InGaAs for PDs, with a focus on APD operation in the SWIR spectral region, which can be integrated onto the Si platform and is potentially compatible with CMOS technology.

show abstract

“…compatibility. Compared to the high-vacuum MBE reaction with a clean dangling bond surface, the CVD reaction process is more complex, and the material surface is generally rich in reaction byproducts and precursor molecules. ,,− For the SiGe/Si MLs structure, in the process of growing SiGe on the Si layer, the Si–SiGe interface tends to be abrupt. However, during Si deposition on SiGe layers, the dangling bond energy causes that deposited Si to diffuse into the subsurface layers, forming a broad interface. ,,− In previous studies, the introduction of surfactants to passivate the dangling bonds on Si/Ge surfaces can effectively improve the interface characterization.…”

Section: Introductionmentioning

confidence: 99%

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Kong,

Song,

Wang

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Special Issue: Silicon Nanodevices

Abstract: In recent years, nanodevices have attracted a large amount of attention due to their low power consumption and fast operation in electronics and photonics, as well as their high sensitivity in sensor applications [...]

Cited by 5 publications

References 10 publications

Enhancing the thermoelectric properties for hot-isostatic-pressed Bi2Te3 nano-powder using graphite nanoparticles

Enhancing the thermoelectric properties for hot-isostatic-pressed Bi2Te3 nano-powder using graphite nanoparticles

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Contact Info

Product

Resources

About