2009
DOI: 10.1016/j.susc.2008.12.024
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Species formed at cuprite fracture surfaces; observation of O 1s surface core level shift

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Cited by 36 publications
(32 citation statements)
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“…There are three other concerns related to the accuracy of BO%: (i) peak asymmetry, (ii) the existence of surface peaks on both BO and NBO + O 2− peaks, 62,63 and (iii) possible OH contamination. These have been discussed in detail in a recent review, 48 but they are worth summarizing.…”
Section: Other Contributions To Uncertaintymentioning
confidence: 99%
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“…There are three other concerns related to the accuracy of BO%: (i) peak asymmetry, (ii) the existence of surface peaks on both BO and NBO + O 2− peaks, 62,63 and (iii) possible OH contamination. These have been discussed in detail in a recent review, 48 but they are worth summarizing.…”
Section: Other Contributions To Uncertaintymentioning
confidence: 99%
“…63 Surface signals will be present for both the BO and NBO peaks and tend to "cancel" each other during fitting of the spectra. It cannot be argued that surface contributions preferentially enhance BO signals relative to NBO signals, which would lead to abnormally high X BO and O 2− values.…”
Section: Other Contributions To Uncertaintymentioning
confidence: 99%
“…The kinetic energy of O 1s photoelectrons is about 940 eV so that the topmost atomic layer should make weak surface contributions to both the BO and NBO peaks of the O 1s spectrum; to our knowledge, there has been only one study of an oxide where a surface contribution has been demonstrated [16]. The surface contribution was weak even though the synchrotron study was optimized to maximize surface contributions.…”
Section: Surface and Bulk Contributions To Xps Spectramentioning
confidence: 99%
“…The unobserved surface O peak in uncoated SiO 2 will be at lower BE (probably ≤0.5 eV) than the bulk [23,24], so the ∼2.3 eV shift to lower BE of this peak is consistent with a shift of ∼1.8 eV in the surface peak due to the Cr bonded to each surface O atom. Fig.…”
Section: O 1s and Si 1s Narrow Scansmentioning
confidence: 75%
“…Such a linewidth is critical for the future studies of silicate glasses at high photon energies. Second, using a thin metal films on the SiO 2 , we want to quantify the increase in escape depth for SiO 2 from 1486 eV to 5000 eV photon energies, and demonstrate that we can use the O 1s and Si 1s chemical shifts created by the interface Cr-subox to indirectly determine the unknown intensity of the expected [13,23,24], but not previously observed, surface peaks. Third, we will also show that the minimum Si 1s linewidths obtained are consistent with that expected from the final state vibrational broadening mechanism outlined previously for the Si 2p and O 1s linewidths [12][13][14][15][17][18][19]].…”
Section: Introductionmentioning
confidence: 97%