2011
DOI: 10.1557/opl.2011.1202
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Specific contact resistance of ohmic contacts to n-type SiC membranes

Abstract: Membranes of epitaxial SiC have been used as a means of eliminating the leakage current into the Si substrate during circular transmission line model (CTLM) measurements. In the n +-3C-SiC/ Si wafers, the Si substrate was etched in a patterned window with dimensions up to 10 mm x 15 mm 2 . An array of CTLM metal contacts was then deposited onto the upper surface of the n + -SiC membrane. The CTLM contacts on the membrane have shown an ohmic current/ voltage response while electrodes located on the adjacent sub… Show more

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Cited by 2 publications
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