Specific features of piezogalvanomagnetic effects in oxygen-containing silicon crystals in the presence of thermal donors-I and -II

Abstract

Quantitative changes of the thermal ionization energy of thermal donor levels depending on the mechanical stress magnitude in a sample are determined both for thermal donors‐I (heat treatment 450 °C) and for thermal donors‐II (heat treatment 650 °C) by means of piezogalvanomagnetic effects in oxygen‐containing p‐Si crystals recompensated by thermal donors into the n‐type. Different nature of ionization energy changes is established for levels ϵ1 ≈ 0.064 and ϵ2 ≈ 0.14 eV in the double‐charged thermal donors‐I. All the experimental data indicate that the dependence of the thermal donor level position on the pressure is affected also by the nature of the centre.