Specific features of radiation-stimulated breakdown of a nonuniformly doped p-n junction

Electron transport in thin-base transistor structures exposed to high-energy photons

“…Our previous study addressed the development of an avalanche induced thermal breakdown in a non uniformly doped p-n junction under ionizing irradia tion when the depletion layer thickness is greater than the energy relaxation length; the velocity v and the mean energy W of hot electrons generated by high energy photons within the depletion layer were shown to vary according to electron point of origin [10].…”