Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells

Yunovich, A. E.; Kudryashov, V. E.; Mamakin, S. S.; Turkin, A. N.; Kovalev, A. N.; Manyakhin, F. I.

doi:10.1002/(sici)1521-396x(199911)176:1<125::aid-pssa125>3.0.co;2-1

Cited by 12 publications

(9 citation statements)

References 9 publications

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“…This paper continues the analysis of electroluminescent spectra of GaN-based LEDs published in [1,2].…”

Section: Introductionsupporting

confidence: 61%

“…(iii) A band on the long-wavelength side, in the range J 70 mA, has maxima which move with voltage approximately linearly: hw max % eU = 1.92-2.04 eV. This band can be described by a model of the tunnel radiative recombination [1,2].…”

mentioning

confidence: 97%

“…Experimental Results Experimental results were obtained on samples of the green light-emitting diodes HLMP-CE30, based on In x Ga 1--x N/Al y Ga 1--y /GaN heterostructures with multiple quantum wells, made in Hewlett Packard laboratories [1,2]. Electroluminescent (EL) spectra in a wide range of currents and intensities were studied and published in detail in [1,2].…”

mentioning

confidence: 99%

“…Electroluminescent (EL) spectra in a wide range of currents and intensities were studied and published in detail in [1,2].…”

mentioning

confidence: 99%

“…1 2 ). It is possible to divide the spectra into three ranges: (i) At high currents J, the maxima move with J ( hw max = 2.35-2.52 eV), as it was seen in other green LEDs with SQWs and MQWs [1,2]. This "moving" band, as discussed and will be analyzed below in detail, can be described by a model of 2D density of states with band tails caused by potential fluctuations.…”

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confidence: 99%

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Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells

Yunovich

Kudryashov

2001

phys. stat. sol. (b)

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Electroluminescence spectra of GaN based LEDs are analyzed quantitatively using a model of 2D density of states with band tails. Calculations take into account an energy diagram with given band offsets between AlGaN, InGaN and GaN layers. The model describes spectral shapes with four fitting parameters in a wide range of currents and intensities with a good accuracy. Fluctuations of well thickness (heterointerface roughness), of In content, of charged impurities and piezoelectric fields are discussed for an evaluation of the exponential tail parameter of 2D density of states in the active region. Spectral maxima move with current changes due to the filling of the band tails and redistribution of current carriers between regions with a larger probability of radiative recombination. 2D concentrations and lifetimes of minority carriers in active layers are evaluated from the parameters of the model. IntroductionThe problem of recombination mechanisms in LEDs based on InGaN/ AlGaN/GaN heterostructures with quantum wells is still in discussion. This paper continues the analysis of electroluminescent spectra of GaN-based LEDs published in [1,2].

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“…This paper continues the analysis of electroluminescent spectra of GaN-based LEDs published in [1,2].…”

Section: Introductionsupporting

confidence: 61%

mentioning

confidence: 97%

mentioning

confidence: 99%

“…Electroluminescent (EL) spectra in a wide range of currents and intensities were studied and published in detail in [1,2].…”

mentioning

confidence: 99%

mentioning

confidence: 99%

See 3 more Smart Citations

Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells

Yunovich

Kudryashov

2001

phys. stat. sol. (b)

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Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

Rossi

Pavesi

Meneghini

et al. 2006

Journal of Applied Physics

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This work describes an experiment on degradation mechanisms of InGaN light-emitting diode LED test structures which do not fulfill the requirements of longlife products. We present a combined capacitance-voltage C-V, deep level transient spectroscopy DLTS, electroluminescence EL, and cathodoluminescence CL study of short-term instabilities of InGaN/GaN LEDs submitted to low current aging tests at room temperature. In the early stages of the aging tests, the EL and CL characterizations showed an optical power decrease, more prominent at low current levels. The C-V profiles indicated that the stress induced an apparent charge increase, well related to the deep level changes detected by DLTS and to the optical power decrease. It is supposed that the main cause of the degradation is the generation of nonradiative paths, due to the generation/ propagation of defects activated by carrier transport

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Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes

Pavesi

Manfredi

Rossi

et al. 2006

Applied Physics Letters

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Traps govern the temperature dependence of current in III-nitride quantum heterostructures, but frequently electrical measurements result unable to identify how many and what kind of defects take part in the conduction. The present work shows how a combined electrical and optical characterization in temperature can detect localized defects involved in injection mechanisms in InGaN/AlGaN/GaN blue light lmitting diodes. At least two different traps assisting the carrier injection by tunneling and playing an active role below and above 175 K, respectively, are identified in or nearby the active layers

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Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells

Cited by 12 publications

References 9 publications

Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells

Energy Diagram and Recombination Mechanisms in InGaN/AlGaN/GaN Heterostructures with Quantum Wells

Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

Temperature dependence of the electrical activity of localized defects in InGaN-based light emitting diodes

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