Spectra of the Gallium Nitride Growth Traps

Brudnyi, P. A.

doi:10.1007/s11182-020-01971-2

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“…This situation is in a good agreement with the GaN deep level energy spectrum (figure 5) [61]. The dependence of φ Ubm and n u on the bias U is explained by distortion of the form of the BSh resulting from the change in total electrical charge of donor Q Dssi and acceptor Q Assi NSS, Q ssi = Q Dssi + Q Assi , at the Fermi level (E F ) shift into the space charge region.…”

Section: The Influence Of γ-Irradiation On I-v Curve 'Linear' Section...supporting

confidence: 86%

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts

Torkhov

Градобоев²,

Budnyaev³

et al. 2022

Semicond. Sci. Technol.

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The obtained results suggest that 60Co γ-irradiation with small doses (Dγ~140 Gy) has a complex impact on close AuNi/n-n+-GaN{0001} Schottky contacts. Such impact manifests itself in disappearance of current steps in the initial section of the forward current-voltage curve; improvement of average values of ideality factor n and decrease of average values of true Schottky barrier height φbn in the middle section; and increase of series resistance Rs and enhancement of the inhomogeneous metal–semiconductor contact series resistance effect in the final section. In all cases the observed changes have a sustainable nature. The combination of the Zur–McGill–Smith close Schottky contact defect model, the inhomogeneous contact model and the radiation-induced defects formation model provides an explanation for physical mechanisms of the changes observed in electrophysical and device characteristics after γ-irradiation. Such mechanisms are associated with changes in electrophysical nature of GaN structural defects (dislocations and interface states) and degradation of contact conductivity homogeneity. The paper shows that the low temperature anomaly also manifests itself in close AuNi/n-n+-GaN Schottky contacts subjected to γ-irradiation.

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Section: The Influence Of γ-Irradiation On I-v Curve 'Linear' Section...supporting

confidence: 86%

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts

Torkhov

Градобоев²,

Budnyaev³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Spectra of the Gallium Nitride Growth Traps

Cited by 1 publication

References 27 publications

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts

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Spectra of the Gallium Nitride Growth Traps

Cited by 1 publication

References 27 publications

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n+-GaN Schottky contacts

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n+-GaN Schottky contacts

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Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts

Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n⁺-GaN Schottky contacts