Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

Escarré, Jordi; Villar, F.; Asensi, J.M.; Bertomeu, J.; Andreu, J.

doi:10.1016/j.jnoncrysol.2005.12.046

Cited by 10 publications

(4 citation statements)

References 10 publications

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“…The ratio of the scattered light and the total light incident on the surface is called the haze parameter. The dependence of the scattering process on the direction was modeled using the angular distribution function [ 39 ]. The haze functions for the reflection and transmission coefficients in Formula (4) express the roughness quality of the solar cell’s surface.…”

Section: Methodsmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

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Metal oxides are commonly used in optoelectronic devices due to their transparency and excellent electrical conductivity. Based on its physical properties, each metal oxide serves as the foundation for a unique device. In this study, we opt to determine and assess the physical properties of MoO3 metal oxide. Accordingly, the optical and electronic parameters of MoO3 are evaluated using DFT (Density Functional Theory), and PBE and HSE06 functionals were mainly used in the calculation. It was found that the band structure of MoO3 calculated using PBE and HSE06 exhibited indirect semiconductor properties with the same line quality. Its band gap was 3.027 eV in HSE06 and 2.12 eV in PBE. Electrons and holes had effective masses and mobilities of 0.06673, −0.10084, 3811.11 cm2V−1s−1 and 1630.39 cm2V−1s−1, respectively. In addition, the simulation determined the dependence of the real and imaginary components of the complex refractive index and permittivity of MoO3 on the wavelength of light, and a value of 58 corresponds to the relative permittivity. MoO3 has a refractive index of between 1.5 and 3 in the visible spectrum, which can therefore be used as an anti-reflection layer for solar cells made from silicon. In addition, based on the semiconducting properties of MoO3, it was estimated that it could serve as an emitter layer for a solar cell containing silicon. In this work, we calculated the photoelectric parameters of the MoO3/Si heterojunction solar cell using Sentaurus TCAD (Technology Computing Aided Design). According to the obtained results, the efficiency of the MoO3/Si solar cell with a MoO3 layer thickness of 100 nm and a Si layer thickness of 9 nm is 8.8%, which is 1.24% greater than the efficiency of a homojunction silicon-based solar cell of the same size. The greatest short-circuit current for a MoO3/Si heterojunction solar cell was observed at a MoO3 layer thickness of 60 nm, which was determined by studying the dependency of the heterojunction short-circuit current on the thickness of the MoO3 layer.

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Section: Methodsmentioning

confidence: 99%

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

et al. 2022

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“…The dependence of the R total values of the bilayers on surface roughness was negligible over the wavelength range above 450 nm, whereas the R total values of the Al:Si films decreased with increasing σ rms values. The normal absorption losses observed at wavelengths below 450 nm are due to the surface plasmon of Ag [25], but the effects on the performance of a Si thin-film solar cell in the n-i-p configuration are not particularly important because the photons generated in the short wavelength region are mostly absorbed in the active layer [27]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhanced light-scattering properties of sputtered Ag/Al:Si bilayers deposited at a low substrate temperature – A potential back reflector for highly efficient flexible thin-film photovoltaic devices

Cho

Kim

Choi

et al. 2014

Solar Energy Materials and Solar Cells

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“…The theory of scalar scattering [32] calculates the scattering of light from surface. Light is scattered from a textured surface at different angles, and the scattering is calculated by an angle-dependent angular distribution function [33]. Haze parameters are calculated to modify the reflection and transmission parameters.…”

Section: Methodsmentioning

confidence: 99%

Optimizing CZTSe Solar Cell Architecture: Comparative Study of ZnO, TiO₂, and MoO₃ as Electron Transport Layers

Gulomov,

Accouche,

Ziyoitdinov

et al. 2024

IEEE Access

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This study investigates the optimization of Cu 2 ZnSnSe 4 (CZTSe)-based solar cells by employing distinct charge transport layers (CTLs) for enhancing their efficiency. ZnO, TiO 2 , and MoO 3 are evaluated as electron transport layers (ETLs), while NiOx serves as a hole transport layer (HTL). By systematically varying ETL and CZTSe layer thicknesses, the influence of these parameters on solar cell performance is explored. According to obtained results, it has been found that the optimum size of base and emitter layers are equal to 2 µm and 80 nm in n-ZnO/p-CZTSe/p-NiO x , 1.5 µm and 60 nm in n-TiO 2 /p-CZTSe/p-NiO x , as well as 1 µm and 60 nm in n-MoO 3 /p-CZTSe/p-NiO x . Maximum efficiencies of n-ZnO/p-CZTSe/p-NiO x , n-TiO 2 /p-CZTSe/p-NiO x , and n-MoO 3 /p-CZTSe/p-NiO x solar cells with optimal sizes are equal to 21.35%, 21.76% and 24.14%, respectively. So, MoO 3 with thickness of 60 nm is the optimal ETL for CZTSe based solar cell due to forming high electric field and large electrostatic potential difference which helps to separate effectively the photogenerated electron-hole pairs. Each solar cells reached to maximum open circuit voltage at minimum base thickness and to maximum short circuit current at maximum base thickness. Furthermore, the study assesses the potential of CZTSe, a promising alternative to traditional silicon-based solar cells, as it exhibits a tunable bandgap allowing for efficient sunlight absorption. The investigation delves into the unique ETL/CZTSe/HTL structure, utilizing ZnO, TiO 2 , and MoO 3 as ETLs and NiOx as the HTL. The results reveal that MoO 3 , with a thickness of 60 nm, emerges as the optimal ETL for CZTSe-based solar cells, achieving a peak efficiency of 24.14% due to its ability to create a high electric field and significant electrostatic potential difference, enhancing the effective separation of photogenerated electron-hole pairs. Additionally, the study explores the interplay between emitter and base layer thicknesses, demonstrating the impact on open circuit voltage and short circuit current, providing valuable insights for the design and optimization of CZTSe-based solar cells.

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Spectral analysis of the angular distribution function of back reflectors for thin film silicon solar cells

Cited by 10 publications

References 10 publications

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Atom-to-Device Simulation of MoO3/Si Heterojunction Solar Cell

Enhanced light-scattering properties of sputtered Ag/Al:Si bilayers deposited at a low substrate temperature – A potential back reflector for highly efficient flexible thin-film photovoltaic devices

Optimizing CZTSe Solar Cell Architecture: Comparative Study of ZnO, TiO₂, and MoO₃ as Electron Transport Layers

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